Jim-Long Hera,
Fa-Hsyang Chenb,
Ching-Hung Chenb and
Tung-Ming Pan*b
aDivision of Natural Science, Center for General Education, Chang Gung University, Taoyuan 333, Taiwan
bDepartment of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan. E-mail: tmpan@mail.cgu.edu.tw; Fax: +886-3-2118507; Tel: +886-3-2118800 ext. 3349
First published on 24th December 2014
In this study, we report the structural and electrical characteristics of high-κ Sm2O3 and SmTiO3 charge trapping layers on an indium–gallium–zinc oxide (IGZO) thin-film transistor (TFT) for non-volatile memory device applications. The IGZO TFT non-volatile memory featuring a SmTiO3 charge trapping layer exhibited better characteristics, including a larger memory window (2.7 V), long charge retention time (105 s with charge loss <15%) and better endurance performance for program/erase cycles (104), compared with a Sm2O3 charge trapping layer. These results can be attributed to the SmTiO3 film possessing a high dielectric constant and deep trapping level. The high-κ SmTiO3 is an excellent candidate for use as the trapping layer in IGZO TFT non-volatile memories.
Recently, rare-earth (RE) oxide films are considered to be suitable materials for further scaling of nonvolatile memory devices because of their promising thermal stability and better electrical properties.14,15 Among RE oxide materials, thin Sm2O3 film is one of the most potential candidates as a charge trapping layer for nonvolatile memory applications due to its high dielectric constant of 15, wide energy bandgap of 4.33 eV and high breakdown electric field of 7 MV cm−1.15–17 However, the formation of hydroxide film is found at the surface of RE oxide due to high hygroscopicity.18 To avoid this problem, the high stability properties of RE oxide film can be realized by the addition of Ti atoms into the RE film.19 In our previous research results showed that the incorporation of Ti into RE oxide films exhibited excellent electrical characteristics including a high dielectric constant, a low leakage current and a large breakdown voltage.20 In this paper, we compared the high-κ Sm2O3 and SmTiO3 films as a charge trapping layer in metal-oxide-high-κ-oxide-IGZO (MOHOI) nonvolatile memory based on TFT device. The film structure and composition of high-κ Sm2O3 and SmTiO3 films were analyzed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. The electrical characteristics of high-κ Sm2O3 and SmTiO3 MOHOI-type TFT nonvolatile memories are also investigated.
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Fig. 1 Schematic structure of the IGZO TFT nonvolatile memory with a high-κ Sm2O3 or SmTiO3 charge trapping layer. |
The crystalline structure and the chemical composition of the dielectric films were investigated using XRD and XPS analyses, respectively. XRD analysis was performed using a Bruker-AXS D5005 diffractometer with a Cu Kα (λ = 1.542 Å) radiation. The chemical bonding of the dielectric was determined using a monochromatic Al Kα (1486.7 eV) source. The transfer characteristics (drain current–gate voltage, IDS–VGS) of the high-κ Sm2O3 and SmTiO3 IGZO TFT nonvolatile memories were measured by an Agilent 4156C semiconductor parameter analyzer. The threshold voltage (VTH) of TFT nonvolatile memories was defined as the VGS at which the IDS reaches 0.1 nA for a drain voltage of 1 V.
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Fig. 2 (a) XRD pattern of the Sm2O3 and SmTiO3 dielectric films. XPS spectra of (b) Sm 3d and (c) O 1s for Sm2O3 and SmTiO3 dielectric films. |
Fig. 3 shows the transfer (IDS–VGS) characteristics of the MOHOI-type TFT nonvolatile memories with Sm2O3 and SmTiO3 charge trapping layers before and after programming voltage at 15 V for 100 ms. The κ value of Sm2O3 and SmTiO3 dielectric films was determined to be 8.6 and 11, respectively, from capacitance–voltage curve. The IGZO TFT nonvolatile memory with a SmTiO3 charge trapping layer has a larger memory window (2.7 V) than that with Sm2O3 charge trapping layer (1.7 V). The IGZO is a natural n-type semiconductor that generally only supplies electrons for charge transport in the channel. During electrical programming, electrons from the a-IGZO channel can be easily trapped in the SmTiO3 by Fowler–Nordheim (F–N) tunneling. The high dielectric constant of SmTiO3 film increased the effective electric field across the tunneling oxide, thus enhancing more electrons trapped in the SmTiO3 film. The effective electric field across the SiO2 tunneling layer in Sm2O3 and SmTiO3 IGZO TFT memories was estimated to be 1.97 and 2.08 MV cm−1, respectively.
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Fig. 3 Transfer characteristics of the MOHOI-type TFT nonvolatile memories with Sm2O3 and SmTiO3 charge trapping layers. |
Fig. 4(a) and (b) illustrate the band diagram of the SmTiO3 IGZO TFT memory device after the programming and erasing operation, respectively. When the positive voltage pulse was applied for the program state, as shown in Fig. 4(a), the electrons accumulated in the IGZO channel were transferred into the SmTiO3 trap layer. Therefore, the VTH is shifted to the positive direction. At this state, it can be expected that most electrons trapped in the SmTiO3 trap layer were located in deep level states, because shallow levels of SmTiO3 were mostly filled with inherent electrons.26 The electrons should pass through the shallow level states to the deep level states. A large number of electrons located in the shallow level states of SmTiO3 could act as some self-limiting elements due to their same polarity. Furthermore, for the case of erasing state shown in Fig. 4(b), the electrons accumulated in shallow levels can be firstly transported to the IGZO channel and the electrons trapped in deep levels are subsequently detrapped. Then, the required erase time for the erasing operation, which was involved with the trapping event into the deep levels of SmTiO3, may be longer than that for the program state, which was related to the charge transfer from the shallow levels of SmTiO3.
Fig. 5(a) illustrates the ΔVTH values of the SmTiO3 MOHOI-type TFT memory device as a function of the programming time under various gate voltage stresses, where drain and source are grounded. The ΔVTH is defined as the change in threshold voltage between the virginal and programmed states. The F–N tunneling programming and erasing were used for high-κ SmTiO3 IGZO TFT nonvolatile memory operations. We find that the ΔVTH value increases with increasing the programming time. The amount of electrons, which are responsible for the shift of the VTH, trapped in the SmTiO3 layer during the programming process is a function of the programming time, and hence it increases with increasing the programming time. In addition, program voltage was increased, memory window was also increased. After the programming condition of VGS = 15 V at 100 ms, the SmTiO3 IGZO TFT memory device exhibits a large memory window of 2.7 V. The energy bandgap of SmTiO3 film could be decreased by the incorporation of Ti into the Sm2O3.27 This bandgap narrowing gives rise to a large conduction band offset to the trapping layer that facilitates the trapping of the electrons. The SmTiO3 layer was employed to store the high density of injected electrons from the IGZO active layer, causing a large threshold voltage shift. Fig. 5(b) displays the ΔVTH value of the SmTiO3 IGZO TFT memory device as a function of the erasing time under different gate voltage stresses (drain and source are grounded). The gate voltage-dependent erasing characteristics are investigated with a fixed erasing time of 100 ms. The ΔVTH decreases from −2.1 to −2.7 V as the erasing voltage decreases from −9 to −15 V, respectively.
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Fig. 5 Threshold voltage shift of the SmTiO3 MOHOI-type TFT nonvolatile memory as a function of the (a) programming time (b) erasing time. |
Fig. 6(a) shows the data retention characteristics of the Sm2O3 and SmTiO3 MOHOI-type TFT memory devices measured at room temperature. In the programming state, the IGZO TFT memory device using a SmTiO3 film has a lower charge loss (<15%) than that with a Sm2O3 film, measured at 105 s. The addition of Ti into the Sm2O3 created more deep trapping level in the SmTiO3. The trapping electrons transferred readily from shallow level to adjacent deeper level by lateral hopping.28 Therefore, the good data retention characteristic can be related to the most of trapped charges are trapped in the deep trap states of SmTiO3 dielectric. In the erasing state, there is almost no change in the VTH with time. Fig. 6(b) displays the endurance characteristics of the Sm2O3 and SmTiO3 MOHOI-type TFT memory devices under programming condition: VGS = 15 V for 100 ms and erasing condition: VGS = −15 V for 100 ms. The IGZO TFT memory device featuring a SmTiO3 film exhibited better endurance characteristics compared with Sm2O3 film. A slight memory window narrowing occurred and individual threshold voltage shifts become visible in the program and erase states after 100 cycles. This behaviour may be attributed to a large number of storage charges causing the defects in the tunnel oxide during charge transportation process.29 Another possible reason for narrowing of the memory window is that the IGZO film itself is sensitive to the atmosphere and becomes unstable under long time exposure to air or electrical field stressing.30 The trapped charge in the trapping layer easily escapes because of the film variation or is neutralized by the charges in the gate dielectric and gate-dielectric/channel interface.31 After 104 program/erase (P/E) cycles, the memory window of SmTiO3 MOHOI-type TFT memory is still fixed around 2.2 V.
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Fig. 6 (a) Charge retention and (b) endurance characteristics for the Sm2O3 and SmTiO3 MOHOI-type TFT nonvolatile memories. |
The important device parameters of MOHOI-type TFT memory devices are listed in Table 1, where the data from IGZO TFT memory devices using SiO2/IGZO/SiO2,31 Al2O3/IGZO/Al2O3,32 HfLaO/HfON/HfLaO,33 SiO2/Sm2O3/SiO2, and SiO2/SmTiO3/SiO2 stacked structures are listed for comparison. Although our SiO2/SmTiO3/SiO2 TFT memory has a low memory window and a high P/E voltage, it exhibits good data retention and endurance.
Gate stacks | Memory window (V) | P/E voltage (V) and time (ms) | Charge loss (105 s) | P/E cycles |
---|---|---|---|---|
SiO2/IGZO/SiO2 | 5.6 | P: VG = 18 for 10 | NA | NA |
E: VG = −23 for 100 | ||||
Al2O3/IGZO/Al2O3 | 3.8 | P: VG = 14 for 10 | >30% | 103 |
E: VG = −14 for 10 | ||||
HfLaO/HfON/HfLaO | 1.2 | P: VG = 8 for 1 | >60% | 102 |
E: VG = −8 for 0.1 | ||||
SiO2/Sm2O3/SiO2 | 1.7 | P: VG = 15 for 100 | >20% | 103 |
E: VG = −15 for 100 | ||||
SiO2/SmTiO3/SiO2 | 2.7 | P: VG = 15 for 100 | <15% | 104 |
E: VG = −15 for 100 |
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