Hao Xin,
Dawei He*,
Yongsheng Wang*,
Wen Zhao and
Xiang Du
Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, 100044, P. R. China. E-mail: dwhe@bjtu.edu.cn; yshwang@bjtu.edu.cn; Fax: +86-010-51688018; Tel: +86-010-51688018
First published on 5th December 2014
In this work, a simple method by using ammonia at a relatively low temperature (90 °C) to prepare nitrogen-doped graphene hydrogel (N-GH) is demonstrated. Ammonia is not only a nitrogen source but also a modification to the 3D structure of graphene hydrogel. The structure and morphology characterization of the materials was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy. The resulting N-GH has a high atomic percentage of N up to 13.44%. It has been found that the supercapacitor performance of the resulting N-GH could be significantly improved. At the constant current density of 1 A g−1, the specific capacitance was estimated as 217.8 F g−1. Even at the constant current density of 200 A g−1, the electrode still has a specific capacitance of 189.8 F g−1. The material also has a retention rate of 95.8% of its initial capacitance after 1000 cycles at a current density of 20 A g−1. Moreover, the N-GH has excellent electrochemical stability and a good performance for the rate property even at an ultrafast charge/discharge rate; thus, they may have potential applications as ultrafast supercapacitors.
Nitrogen doping is an important means developed in recent years to produce graphene hydrogel with high capacitance. It was found to be an effective method to alter the properties of graphene hydrogel because nitrogen chemically binds to the carbon lattice of graphene hydrogel.19–21,31 Moreover, nitrogen has a comparable atom size and high eletronegativity compared to carbon.8,19,20 Although some methods have recently been reported to synthesize nitrogen-doped graphene hydrogel (N-GH), such as CVD method and arc discharge method,21–23 these methods require complicated experimental conditions. Compared with these methods, the low-temperature method reported in this work has the merit of using mild conditions.
In this work, we report a low-temperature approach to prepare the nitrogen-doped graphene hydrogel. The doping process can be successfully realized at the temperature as low as 90 °C by heating graphene oxide (GO), sodium sulfide (Na2S) and ammonia in a 20 mL sample vial. The reaction between NH3 and oxygenic groups in GO is facilitated by Na2S. Simultaneously, Na2S ensures the formation of the hydrogel. The 3D structure of the graphene hydrogel provides the interconnected frameworks with a macroporous architecture, which are in favor of ion diffusion and electron transport.24,25,40 Moreover, the nitrogen doping in carbon networks can facilitate a charge transfer between neighboring carbon atoms, and thus enhance the electrochemical performance of carbon materials.26–28 Eventually, the resulting N-GH has not only a high atomic percentage of N, up to 13.44%, but also high capacitance and excellent electrochemical stability.
To synthesize graphene hydrogel (GH), a 2 mg mL−1 solution of graphene oxide was prepared at first. Then, 1 mL GO solution and 52 μL Na2S were placed in the oven and heated at 90 °C for 8 hours. After cooling to room temperature, the GH samples were obtained.
To synthesize nitrogen-doped graphene hydrogel (N-GH), a 2 mg mL−1 solution of graphene oxide was prepared at first. Then, 1 mL GO solution and ammonia were placed together with the weight ratio of NH3·H2O/GO = 1:
2, 1
:
4, 1
:
8, which are denoted as N-GH2, N-GH4, N-GH8, respectively. Subsequently, 52 μL Na2S was added into the solution. Finally, the samples were placed in the oven and heated at 90 °C for 8 hours. After cooling to room temperature, the N-GH samples were obtained.
To characterize the morphology and structure of the samples, sample preparation is necessary. The samples need to be washed by the deionized water, and then freeze-dried for 24 hours at −50 °C.
All tests were carried out in a two-electrode cell system to study the electrochemical properties by galvanostatic charge/discharge, the cycle voltammogram (CV) and electrochemical impedance spectroscopy (EIS) on a CHI660C electrochemical workstation.
In this reaction, ammonia reacts with carboxylic acid species and forms an amide-like structure, and then decarbonylate to form stable aromatic structures. Ammonia can also react with other oxygen-containing moieties to reduce graphene oxide. Na2S reacts with the remaining oxygen-containing moieties to hinder the π–π stacking in the single graphene sheet, which helps to complete the reduction reaction.
Fig. 2 shows the SEM images of a typical N-GH. The SEM images (Fig. 2a–d) show that N-GH has an interconnected three-dimensional porous network. The pore size ranges from a few hundred nanometers to several micrometers. Note that NH3 reacts with oxygen containing moieties, and during this process, the reduced graphene sheets, which are in high concentration, will assemble into hydrogel due to the π–π stacking interactions. The reaction of NH3 and GO can impede the π–π stacking in the single graphene sheet and expand the space between the graphene sheets. Consequently, compared with the GH, there are bigger porous networks in N-GH. Fig. S1 and Table 1† indicate that the reaction between NH3 and oxygenic groups in GO has been completed and results in a high atomic percentage of N up to 13.44% in N-GH. The resulting NG sheets have relatively high capacitance and excellent electrochemical stability.
Fig. 3 shows the XRD results of GO, GH and the different weight radio N-GH. The XRD pattern of GO exhibits an intense and sharp peak at around 2θ = 11.38°, indicating that the interlayer distance is approximately 0.777 nm. This value is much larger than that of graphite (0.336 nm),30 owing to the amounts of oxygen-containing functional groups inserted into the graphite layers. After reduction with the Na2S at 90 °C, the diffraction peak at 2θ = 11.38° disappears and a broad peak at 2θ = 25° is found in the XRD pattern of the GH, indicating the interlayer distance is approximately 0.365 nm. The XRD pattern of N-GH2, N-GH4, N-GH8 also shows a major peak at 2θ = 25°, which corresponds to an average interlayer spacing of 3.74, 3.72 and 3.68. These spacing values are still higher than that of graphite (0.336 nm) due to doping with oxygen and nitrogen. The XRD results indicate that the GH, N-GH2, N-GH4 and N-GH8 are successfully prepared from graphene oxide.39,42,43
Fig. 4 shows the XPS results of GH and N-GH. The XPS spectra of GH and N-GH are shown in Fig. 4a. For the GH samples, only the C1s peaks (about 285.1 eV) and O1s (about 531.5 eV) peaks are detected, while an additional peak at 400.0 eV ascribed to N1s can be observed for N-GH samples. The figure clearly shows the appearance of a peak at about 400 eV, which corresponds to nitrogen. Fig. 4b shows the C1s peaks and high resolution results of N-GH. For a high resolution of C1s spectrum of N-GH, the dominant peak at 284.5 eV corresponds to sp2-hybridised graphitic carbon atoms, which indicates that most of the carbon atoms in the N-GH are arranged in a conjugated honeycomb lattice. The small peak at 288.0 eV corresponds to CO configurations, which revealed that most of the oxygen groups had been removed. The new peak at 285.9 eV can be indexed to N-sp2, and it appeared because of the doping of nitrogen atoms. Fig. 4c show the N1s peaks and its high resolution results of N-GH. It is clear that nitrogen is observed in N-GH, confirming its incorporation into graphene hydrogels. In general, there are mainly four nitrogen functional groups in nitrogen-doped carbon. The peak at 398.7 eV corresponds to pyridinic-N, which refers to nitrogen atoms at the edge of the graphene planes. The peak at 400.4 eV corresponds to pyrrolic-N, which refers to nitrogen atoms that are bonded to two carbon atoms and contribute to the system with two p-electrons. The peak at 401.2 eV corresponds to graphitic-N. Nitrogen atoms are incorporated into the graphene layer and replace carbon atoms within a graphene plane. The peak at 405.1 eV corresponds to oxidized nitrogen. The XPS results indicate that N-graphene contains all these three functional groups (pyridinic-N, pyrrolic-N, and graphitic-N).41–43
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Fig. 4 XPS results of N-GH2 and GH. (a) XPS spectra for GH and N-GH. (b) C1s peaks and high resolution results of N-GH. (c) N1s peaks and high resolution results of N-GH. |
The galvanostatic charge/discharge curves at different current densities are shown in Fig. 5c–e. The shape of the curves is almost typical isosceles triangle and highly linear, indicating that the electrode material has ideal capacitive characteristic and excellent electrochemical reversibility. The specific capacitance values of the N-GH electrode are calculated using galvanostatic charge/discharge curves. The equation is:
Cs = 2IΔt/ΔVm |
The bigger porous network in N-GH after nitrogen-doping is in favor of the ion diffusion and electron transport. The improved capacitance by nitrogen doping is maintained well for the higher current densities. As is shown in Fig. 6a, the N-GH has the ultrafast charging rate and a good performance for the rate capability even at a high current density.
Electrochemical impedance spectroscopy (EIS) measurements at a frequency range of 100 kHz to 0.01 Hz were carried out in Fig. 6b. The Nyquist plots for N-GH and GH show a semicircle over the high-frequency range, followed by a straight sloped line in the low-frequency region. The straight line is ascribed to the diffusive resistance of the electrolyte in the electrode pores and proton diffusion in the host materials.34–38 At a low frequency, the line of the N-GH sample is more vertically straight than that of the GH sample, which indicates the faster ion diffusion behavior of the porous samples. Therefore, the electrode resistance of the N-GH is much lower than that of GH. In addition, at a current density of 20 A g−1, the N-GH's capacitance remained at 95.8% after 1000 cycles (Fig. 6c).
Footnote |
† Electronic supplementary information (ESI) available: The summary of methods to prepare the typical GO, GH and N-GH; EDS images of the GH and N-GH. (Fig. S and Table 1) See DOI: 10.1039/c4ra09497b |
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