Issue 30, 2015

Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics

Abstract

Using thermally evaporated cesium carbonate (Cs2CO3) in an organic matrix, we present a novel strategy for efficient n-doping of monolayer graphene and a ∼90% reduction in its sheet resistance to ∼250 Ohm sq−1. Photoemission spectroscopy confirms the presence of a large interface dipole of ∼0.9 eV between graphene and the Cs2CO3/organic matrix. This leads to a strong charge transfer based doping of graphene with a Fermi level shift of ∼1.0 eV. Using this approach we demonstrate efficient, standard industrial manufacturing process compatible graphene-based inverted organic light emitting diodes on glass and flexible substrates with efficiencies comparable to those of state-of-the-art ITO based devices.

Graphical abstract: Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics

Supplementary files

Article information

Article type
Paper
Submitted
18 May 2015
Accepted
30 Jun 2015
First published
06 Jul 2015

Nanoscale, 2015,7, 13135-13142

Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics

S. Sanders, A. Cabrero-Vilatela, P. R. Kidambi, J. A. Alexander-Webber, C. Weijtens, P. Braeuninger-Weimer, A. I. Aria, M. M. Qasim, T. D. Wilkinson, J. Robertson, S. Hofmann and J. Meyer, Nanoscale, 2015, 7, 13135 DOI: 10.1039/C5NR03246F

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