Issue 33, 2015
From the journal:

Physical Chemistry Chemical Physics

Direct formation of large-scale multi-layered germanene on Si substrate†

Hsu-Sheng Tsai,a   Yu-Ze Chen,a   Henry Medina,a   Teng-Yu Su,a   Ta-Shun Chou,b   Yi-Hsuan Chen,b   Yu-Lun Chueh*a  and  Jenq-Horng Liang*c  

* Corresponding authors

a Department of Material Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, Republic of China
E-mail: ylchueh@mx.nthu.edu.tw

b Interdisciplinary Program of Sciences, National Tsing Hua University, Hsinchu 30013, Taiwan, Republic of China

c Department of Engineering and System Science and Institute of Nuclear Engineering and Science, National Tsing Hua University, Hsinchu 30013, Taiwan, Republic of China
E-mail: jhliang@ess.nthu.edu.tw

Abstract

Germanene layers with lonsdaleite structure has been synthesized from a SiGe thin film for the first time using a N2 plasma-assisted process in this investigation. Multi-layered germanene can be directly observed, and the derived lattice parameters are nearly consistent with the theoretical results. Furthermore, large-scale multi-layered germanene has also been demonstrated for applications.

Graphical abstract: Direct formation of large-scale multi-layered germanene on Si substrate

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Article information

DOI
https://doi.org/10.1039/C5CP02469B
Article type
Communication
Submitted
28 Apr 2015
Accepted
12 Jul 2015
First published
15 Jul 2015

Phys. Chem. Chem. Phys., 2015,17, 21389-21393

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Direct formation of large-scale multi-layered germanene on Si substrate

H. Tsai, Y. Chen, H. Medina, T. Su, T. Chou, Y. Chen, Y. Chueh and J. Liang, Phys. Chem. Chem. Phys., 2015, 17, 21389 DOI: 10.1039/C5CP02469B

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