An asymmetric naphthalimide derivative for n-channel organic field-effect transistors

Zongrui Wang; Jianfeng Zhao; Huanli Dong; Ge Qiu; Qichun Zhang; Wenping Hu

doi:10.1039/C5CP01302J

An asymmetric naphthalimide derivative for n-channel organic field-effect transistors†

Zongrui Wang,^ab Jianfeng Zhao,^cd Huanli Dong,*^ae Ge Qiu,^ae Qichun Zhang*^cf and Wenping Hu*^a

* Corresponding authors

^a Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
E-mail: dhl522@iccas.ac.cn, huwp@iccas.ac.cn

^b University of Chinese Academy of Sciences, Beijing 100049, P. R. China

^c School of Materials Science & Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
E-mail: qczhang@ntu.edu.sg

^d Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, P. R. China

^e Department of Chemistry, Capital Normal University, Beijing 100048, P. R. China

^f Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 63731, Singapore

Abstract

A new naphthalene diimide (NDI) derivative with an asymmetric aromatic backbone of 2-tetradecylbenzo[lmn]benzo[4,5]imidazo[2,1-b][3,8]phenanthroline-1,3,6(2H)-trione (IZ0) was designed and synthesized. Low LUMO level, large energy gap, and high thermal stability are characterized for this IZ0 compound. The OFET devices based on an IZ0 semiconductor exhibit typical n-type behavior. Through continuously optimizing the fabrication conditions, high performance n-channel OFETs were fabricated based on IZ0 films and single crystals, with the highest carrier mobility of 0.072 cm² V⁻¹ s⁻¹ and 0.22 cm² V⁻¹ s⁻¹, respectively.

This article is part of the themed collection: Organic Field Effect Transistors

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DOI: https://doi.org/10.1039/C5CP01302J
Article type: Paper
Submitted: 05 Mar 2015
Accepted: 19 May 2015
First published: 20 May 2015

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Phys. Chem. Chem. Phys., 2015,17, 26519-26524

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An asymmetric naphthalimide derivative for n-channel organic field-effect transistors

Z. Wang, J. Zhao, H. Dong, G. Qiu, Q. Zhang and W. Hu, Phys. Chem. Chem. Phys., 2015, 17, 26519 DOI: 10.1039/C5CP01302J

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Physical Chemistry Chemical Physics

An asymmetric naphthalimide derivative for n-channel organic field-effect transistors†

Abstract

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An asymmetric naphthalimide derivative for n-channel organic field-effect transistors

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