Correction: Epitaxial growth of GaN films on unconventional oxide substrates

Abstract

Correction for ‘Epitaxial growth of GaN films on unconventional oxide substrates’ by Wenliang Wang et al., J. Mater. Chem. C, 2014, 2, 9342–9358.

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Some of the parameters listed in Table 1 on the third page of this Feature Article were incorrect. The correct version of this table is given below with the revised values given in bold for clarity.

Table 1 Lattice parameters of unconventional oxide substrates and their epitaxial directions

Substrates	Lattice parameters			Epitaxial direction	Lattice mismatch %	Thermal mismatch %	Ref.
	a/nm	b/nm	c/nm
GaN	0.3189	0.3189	0.5185	[0001]	0.0	0	11
Sapphire	0.4760	0.4760	1.2991	[0001]	13.3	27	11 and 12
LSAT	0.7730	0.7730	0.7730	[111]	1.0	3.6	13–15
LiAlO2	0.5169	0.5169	0.6260	[100]	0.3	21.3	16 and 17
LiGaO2	0.5402	0.6370	0.5007	[001]	0.2	16.6	18–20
LaAlO3	0.3791	0.3791	0.3791	[001]	3	39.2	21
MgAl2O4	0.8083	0.8083	0.8083	[111]	9.0	37.9	22 and 23
MgO	0.4210	0.4210	0.4210	[111]	7	56.3	24 and 25
ZnO	0.3250	0.3250	0.5200	[0001]	0.4	7.6	26–28

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Full details of the references cited in Table 1 can be found in the original article (DOI: 10.1039/c4tc01655f).

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

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