Ruchi Gakhara,
Kodi Summersa,
Rishubh Palaniappanb,
Satyananda Kishore Pillia and
Dev Chidambaram*a
aMaterials Science and Engineering, University of Nevada, Reno, Reno, NV, USA
bFettes College, Edinburgh EH4 1QX, UK. E-mail: dcc@unr.edu; spilli@unr.edu
First published on 19th September 2014
The photoanode obtained by the deposition of MnxCdySe nanocrystals onto TiO2 nanotube arrays using a successive ionic layer adsorption and reaction technique realized a significant improvement in the charge transport and current generation compared with a pristine TiO2 nanotube based anode. The concentration of manganese was determined to be 10% of the concentration of cadmium, and thus x = 0.1y. The widening of absorption spectra and the magnitude of photocurrent density were found to be significantly affected with a variation in the number of SILAR cycles and the annealing temperature. A stable photocurrent density of ∼8 mA cm−2 under AM 1.5 illumination (1 sun) was achieved for MnxCdySe nanocrystals-embedded TiO2 nanotube arrays heterostructure based photoelectrodes prepared through 9 cycles of SILAR deposition, followed by annealing at 400 °C under a nitrogen atmosphere. The results obtained suggest the versatility of the MnxCdySe-sensitized TiO2 nanotube matrix as an efficient electrode for photovoltaic applications.
Most common approaches for improving the light harvesting ability of large band gap semiconductors are either based on chemisorption of dye molecules onto the surface of titania nanoparticles13–15 or on the incorporation of quantum dot semiconductors as sensitizer materials.16–21 In case of dye sensitization, charge separation originates through efficient injection of electrons from the excited state of the photoexcited dye molecules into the conduction band of TiO2. For the quantum dot sensitized approach, quantum dots serve the sensitization purpose instead of dye molecules. Quantum dots offer several advantages over dye molecules such as tunable optical properties with size, formation of better heterojunctions with solid hole conductors and a better charge transport. The innate ability of alloy nanocrystals to exhibit varied physical and optical properties of the bulk semiconductor based on the size and composition offer the possibility of their use as efficient photosensitizers with wide band gap semiconductors (e.g. TiO2 and ZnO) as scaffold in photovoltaic (PV) systems. In the past, binary sensitizers such as CdSe,17 CdS,21 CdTe,19 PbS,20 InAs16 and Ag2S18 have been widely employed for the sensitization of TiO2. Unfortunately, binary quantum dot sensitized PEC solar cells generally suffer from severe photostability issues. Chemical reactions of photogenerated charge carriers with the electrolyte or the bulk material leads to photocorrosion in general. Pseudobinary semiconductor alloys (ABxC1−x) scaled to nanometer regime as sensitizer materials have been relatively less exploited and might offer more suitable conditions for the application of inorganic semiconductor quantum dot sensitizers in the development of stable solar cells. For example, pseudobinary semiconductors such as CdSSe,22,23 CdSeTe24 and ZnCdSe25,26 have been effectively employed as sensitizers for TiO2 nanostructures. Fast charge transfer from the quantum dot semiconductors to the neighboring large bandgap semiconductor materials is crucial to subdue the photocorrosion phenomena that are generally observed in quantum dot sensitized semiconductors. One dimensional (1D) nanostructured materials offer a direct and efficient pathway for the photogenerated charge carriers.27–29 Therefore, the presence of one dimensional nanostructured semiconductors along with quantum dot sensitizers would be an efficient approach to overcome the charge transport issues. Considering the potential, it is important to exploit and investigate the photoelectrochemical performance and durability characteristics of new pseudobinary semiconductor quantum dots as sensitized one-dimensional nanostructured large band gap semiconductors. In this report, for the first time, we have studied the photovoltaic performance of the MnxCdySe sensitized TiO2 nanotubes (NTAs). The MnxCdySe sensitized TiO2 NTAs were synthesized using the SILAR technique, and the effect of the varying number of deposition cycles and the post annealing temperature were optimized for performance.
MnxCdySe nanocrystals were deposited on TiO2 NTAs using the facile and convenient SILAR technique. The precursor solutions were made in ethanol/H2O (50/50 vol) solvent, and the deposition was conducted under ambient temperature and pressure. The use of ethanol as a solvent lowers the surface tension, which leads to a better penetration of the solution inside TiO2 NTAs. One SILAR cycle comprised of an immersion of annealed TiO2 NTA film in 0.02 M MnCl2 solution for 45 seconds, followed by rinsing in ethanol/water solvent and subsequent immersion in 0.02 M Cd(OAc)2 solution and finally in Na2Se solution (generated in situ by the reduction of Se metal with 0.04 M NaBH4) for the same amount of time. The samples were prepared for 5, 7, 9 and 12 cycles of deposition and annealed at either 200 °C or 400 °C under N2 atmosphere for 1 hour to analyze the effect of post-deposition thermal annealing on the photoelectrochemical properties of TiO2 NTA.
Fig. 1a–d depict the absorption spectra of the MnxCdySe/TiO2 NTA(n) film annealed at various temperatures, where n indicates the number of deposition cycles. Pristine TiO2 NTA film exhibited a fundamental absorption edge around 380 nm corresponding to the inter-band charge transfer.30,31 In addition, a broad absorption profile in the visible region can be noted around 480 nm, which is a characteristic of oxygen-deficiency of the film.32 Another reason might be the surface plasmon resonance arising from Ti nanoparticles trapped within the nanotubes during anodization process. With incorporation of MnxCdySe, two key observations were noted. First, the absorption was improved significantly in the visible region, and second, an upward shift (towards longer wavelength) in the absorption edge position was noticed. As the number of deposition cycles increased from 5 to 11, enhanced particle loading resulted in more pronounced absorption in the visible region. With annealing at 200 °C under a nitrogen atmosphere, absorption improved in visible region, and the absorption edge experienced red shift compared to the as-deposited sample. With an increase in the annealing temperature to 400 °C, the absorption intensity decreased, but the absorption edge was further shifted towards longer wavelength in all the cases. This indicates that the inclusion of MnxCdySe nanocrystals within the TiO2 NTA framework leads to a more effective utilization of solar spectrum through the sensitization effect.
To determine the fundamental gap of the composite and to identify its nature, Tauc equation was employed which can be given as,33,34
αhν = A(hν − Eg)n |
The crystal structure of TiO2 NTAs before and after modification with MnxCdySe was confirmed using XRD analysis. The diffraction pattern of pristine TiO2 NTA film has been depicted in Fig. 2a.
The pattern shows prominent peaks corresponding to anatase TiO2 phase (JCPDS File no. 00-021-1272) and Ti metal foil substrate (JCPDS File no. 00-044-1294). The XRD patterns of the annealed MnxCdySe/TiO2 NTA films were compared with the pattern of as-deposited (unannealed) MnxCdySe/TiO2 NTA and are shown in Fig. 2b. The signal from the unannealed sample is similar to that from the pristine TiO2 NTA film. However, after thermal annealing under nitrogen atmosphere, additional peaks corresponding to the CdSe phase start appearing. It is apparent that before thermal treatment, Mn, Cd and Se species were adsorbed physically on the surface of the film, and sensitized quantum dots manifest into the crystalline CdSe phase only upon annealing. Another important observation is the enhancement in the intensity of the peaks corresponding to the CdSe phase with the increase in annealing temperature. It indicates that the crystalline nature of the film is improved with the annealing temperature. No significant change is observed for the CdSe phase upon the incorporation of Mn in MnxCdySe crystallites. The absence of any signal due to Mn in MnxCdySe crystal lattice indicates the low dopant concentration of Mn or the presence of Mn below the detection limit. These results are in agreement with the previous studies conducted by authors on ZnxCd1−xSe where low concentrations of Zn dopant were not observed in XRD.25
The morphology of the pristine TiO2 NTAs has been shown in Fig. 3a.
The image illustrates the formation of tubular morphology with diameter and length in the ranges of 80 nm and 5–6 μm, respectively. The formation of the TiO2 with nanotubular morphology is attributable to the electrolyte-assisted dissolution and oxidation of the Ti films during anodization, followed by the annealing process.35 As observed in the case of sensitized films (Fig. 3b–f), the size of MnxCdySe clusters vary significantly with the number of deposition cycles and the annealing temperature. As demonstrated by images Fig. 3b–d, with the increase in number of deposition cycles from 5 to 9, the coverage of nanocrystals on the nanotube surface was increased. In case of the unannealed sample (Fig. 3e), tiny nanoparticles were found distributed at the mouth of nanotubes. After annealing (Fig. 3b–d and f), the MnxCdySe nanoparticles aggregate and form nanoclusters. Further, the cross-sectional SEM images (Fig. 4) depict that the MnxCdySe nanocrystals were deposited within the entire NTs network, including both external and internal regions.
The chemistry of the MnCdSe quantum dots adhering to TiO2 NTAs was confirmed to be MnxCdySe by the compositional XPS analysis of the sensitized TiO2 film. Fig. 5 shows the spectra of the Cd 3d, Se 3d and Mn 2p species on the surface of the MnxCdySe/TiO2 NTA film.
Sharp photoelectron peaks appear at binding energies of 404.7 eV (Cd 3d5/2) and 411.5 eV (Cd 3d3/2) for Cd 3d spectrum (Fig. 5a). The binding energy values, separation energy and degeneracy of states correspond to the formation of the CdSe bond.36 The signal due to Se 3d presented a well-defined doublet associated with spin–orbit interaction (Fig. 5b). The two components obtained at 53.5 eV and 54.3 eV with a separation of 0.8 eV correspond to Se2− species associated with the CdSe crystal. Canava et al. studied the effect of chemical treatments on the Se 3d signal and demonstrated that the shift between the two components of the Se 3d peak is highly sensitive to the chemical preparation techniques.
Moreover, depending upon the chemical treatment of the sample, the shift assigned to the second component of Se 3d can vary up to 1.5 eV.37 In a previous study by the authors on ZnxCd1−xSe (ref. 25), this shift was observed to be 0.9 eV.25 The core-level spectrum of the Mn 2p peak is shown in Fig. 5c. High noise level obtained for the signal indicates the nominal doping concentration of Mn. The Mn 2p spectrum exhibited two peaks at ∼641.8 eV and ∼640.7 eV for Mn 2p3/2, indicating the existence of Mn2+ species in MnxCdySe crystals, as the peaks for metallic Mn and Mn4+ ion are located at 637.7 eV and 642.4 eV, respectively as demonstrated by Lin et al.38
The stoichiometry analysis of MnxCdySe nanocrystals deposited on the sensitized TiO2 NTA film was estimated using ICP-OES analysis, and the results obtained are tabulated in Table 1. As observed from stoichiometry calculations, Mn atoms substitute around 10% of Cd atoms in the CdSe lattice structure.
Ions | Conc (ppm) | Stoichiometry |
---|---|---|
Cd2+ | 76.59 | 0.95 |
Se2− | 56.48 | 1.00 |
Mn2+ | 3.75 | 0.095 |
Such a low concentration of Mn (with x = 0.1) is in agreement with the previous studies on ZnxCd1−xSe, where Zn was found in a similar concentration.25
The dependence of photocurrent on the applied potential for MnxCdySe-sensitized TiO2 NTA films in Na2S and Na2SO3 electrolyte is shown in Fig. 6, and the values have been summarized in Table 1.
Sulfide ions in Na2S act as hole scavengers as discussed by Kamat et al. in 2011.39 Na2SO3 reduces the disulfide species to sulfide again.40 The photocurrent density achieved for pristine TiO2 NTA film was ∼1.39 mA cm−2 under one sun illumination. The current density obtained was 2.24 mA cm−2 for the as-deposited film sensitized with 5 cycles, which increased to 4.67 mA cm−2 for the film with 7 deposition cycles (Fig. 6a and b). This observation is in agreement with SEM results which depicted an increased crystal loading with the increasing number of deposition cycles. With even more sensitizer loading (up to 9 cycles), no significant variation in current density (4.42 mA cm−2) was noticed (Fig. 6c). However, a higher loading of 11 (Fig. 6d) and 12 cycles (not shown here) led to a decrease in the observed photocurrent. These aggregated MnxCdySe nanocrystals in turn act as recombination centers for photoinduced electron–hole pairs, rendering them less effective as sensitizers.41–43 Moreover, increased loading leads to the blockage of nanotubes pores resulting into a poor electrolyte penetration. Thus, a variation in the number of deposition cycles was found to have a profound effect on the current density. Thermal treatment under a nitrogen atmosphere was also found to alter the photoresponse of the films under illumination. MnxCdySe/TiO2 NTA samples prepared through 5, 7 and 9 SILAR deposition cycles followed by annealing at 200 °C, exhibited noticeable enhancement in the photocurrent density compared to the as-deposited film. The ratio of the photocurrent density to dark current density (Ilight/Idark)44 has been represented in Table 2.
Electrode | Annealing temperature | Ratio of the photocurrent density to dark current density (Ilight/Idark) | |||
---|---|---|---|---|---|
TiO2 NTA/MnxCdySe | No. of deposition cycles | ||||
5 cycles | 7 cycles | 9 cycles | 11 cycles | ||
UA | 2.23 | 4.65 | 4.42 | 3.27 | |
200 °C | 5.22 | 6.11 | 6.66 | 4.47 | |
400 °C | 6.36 | 6.90 | 8.79 | 6.17 |
In addition, increasing the annealing temperature from 200 °C to 400 °C resulted in a further increase in the current density in all the cases (Fig. 6a–d). These results are in accordance with the XRD analysis, since with an increase in the annealing temperature, the films become more crystalline in nature. However, the films were no longer stable at temperatures more than 400 °C (data not shown). Therefore, 9 cycles of SILAR deposition followed by annealing at a temperature of 400 °C under N2 atmosphere provides the optimum set of conditions to obtain the highest photocurrent density for MnxCdySe-sensitized TiO2 NTAs. The higher photoresponse generated by sensitized films is attributable to the greater charge collection efficiency of the composite film, facilitated by fast electron injection of excited electrons from the conduction band (CB) of MnxCdySe to CB of TiO2. The incorporation of MnxCdySe nanocrystals into TiO2 matrix enables thermodynamically favourable electron transfer from MnxCdySe to TiO2 NTAs, as depicted in Scheme 1. The holes produced are scavenged by the electrolyte.
More importantly, a better charge conduction and photocurrent density can be attributed to the presence of Mn species (even at such a low concentration), since for the CdSe/TiO2 NTA film synthesized under similar conditions, the current generated was found to be lower than that for the MnxCdySe/TiO2 NTA film (Fig. 7).
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Fig. 7 i–V characteristics of TiO2 NTA/CdSe (9)-400 °C and TiO2 NTA/MnxCdySe (9)-400 °C films measured under 100 mW cm−2 intensity (AM 1.5 global filter). |
The photocurrent values obtained in the present study are higher compared to other sensitized-TiO2 photoelectrodes studied before.40,45–48 The increase in the photocurrent density with sensitization highlights the fact that MnxCdySe helps to effectively harvest a greater part of the solar spectrum. It should be noted that although the photocurrent values for films prepared from the repeated set of experiments may vary by a factor of ±10% due to a variation in the experimental conditions, the trend remains the same.
The photocurrent on–off cycles recorded in a rapid sequence (every 5 s) with respect to zero external bias are shown in Fig. 8.
Photoresponses recorded under intermittent light illumination indicate that the current produced is due to illumination, and the responses are stable as well as reproducible. An instantaneous rise in the photocurrent when the light source was turned on and a prompt recovery to the original value once the illumination was turned off were observed. It demonstrates the minimal mass transport at the electrode–electrolyte interface. It also illustrates the corrosion resistance of the photoanode under visible light illumination.41 The abrupt response of the film to illumination demonstrates that the photoactivity of the MnxCdySe/TiO2 NTA photoanode is stable and reproducible.
Footnote |
† Electronic supplementary information (ESI) available. See DOI: 10.1039/c4ra06345g |
This journal is © The Royal Society of Chemistry 2014 |