Abhishek Kumar Gupta,
Rajendra Kumar Singh* and
Suresh Chandra*
Ionic Liquid and Solid State Ionics Laboratory, Department of Physics, Banaras Hindu University, Varanasi-221005, India. E-mail: rksingh_17@rediffmail.com; sureshchandra_bhu@yahoo.co.in; Fax: +91 542 2368390; Tel: +91 542 6701541
First published on 7th May 2014
The crystallization kinetics behavior of pure ionic liquid (IL) (1-ethyl-3-methylimidazolium tetrafluoro borate; EMIMBF4) as well as IL confined in mesoporous silica matrices (termed as ionogel) is the concern of our present study. The ionogels (IGs) were synthesized by a non-hydrolytic sol–gel process. DSC was employed to investigate the isothermal crystallization kinetics behavior of IL in bulk as well as in confinement. Isothermal crystallization temperatures were chosen a few °C above the onset crystallization temperature of IL in bulk and in confinement. Crystallization kinetic parameters such as relative crystallinity (α), crystallization half time (t1/2), crystallization rate constant (K) and Avrami exponents (n) have been determined by an isothermal technique using DSC. Crystallization kinetic parameters have been found to be dependent on the amount of IL and the crystallization isothermal temperatures. The experimental data based on the isothermal method show that confinement of the IL results in (i) delayed crystallization and (ii) reduced dimensionality of the crystallization kinetics from 3D (for bulk IL) to 1D. X-ray photoelectron spectroscopy (XPS) and transient plane source (TPS) studies have been used to explain the delayed crystallization.
Recently, we have studied [EMIM][BF4] confined in nano porous silica having pore sizes 7.4 and 7.8 nm, as well as unconfined [EMIM][BF4], and found that it shows two crystallization peaks both in bulk and in confinement,28,29 indicating simultaneous presence of two different types of solid phases.28,38,39 The focus of the present study is to find, in general, the effect of confinement on crystallization kinetics and in particular to answer the following questions: (i) does confinement slow down or hasten the crystallization? (ii) whether the crystallization in confinement is 3D or it changes to 1D because of the restrictive barriers due to the walls of confining nano-pores? In the present investigation we have used “isothermal crystallization” technique to study the crystallization kinetics using DSC. It is found that the crystallization slows down on confinement and the ionic liquid prefers 1D crystallization in confinement. X-ray photoelectron spectroscopy (XPS) and transient plane source (TPS) measurements have been used to explain the slowing down of crystallization process of IL in confinement.
To overcome the problem related to the moisture, all the samples (IL as well as IGs) were dried under high vacuum (∼10−6 torr) for 24 h and then heated at 60 °C for ∼12 h before storing in a glove box (Bionics, Model no. BST-TGB10000/A).
A Differential Scanning Calorimeter (DSC) Mettler Toledo DSC-1 was used for the investigation of onset of crystallization, (Tc)onset, and studying crystallization kinetic behavior. The DSC measurements were done in N2 atmosphere with a flow rate of 25 ml min−1 and for this, weight of samples in aluminum pan was kept nearly constant (≈13–15 mg) in all the cases. The results of the measurements (DSC and crystallization kinetics studies) were reproducible for the samples stored in glove box. Before performing the measurements (DSC and crystallization kinetics studies) the samples were again preheated in a sealed pan containing a pin hole by giving a temperature programme for DSC which includes, a first heating cycle (at a heating rate of 20 °C min−1) from 30 °C to 100 °C and holding it there for nearly 5 min. Then the samples were cooled from 100 °C to −120 °C at a cooling rate of −50 °C min−1, followed by an isotherm of 30 min at −120 °C. Finally, the DSC thermograms were recorded from −120 °C to 100 °C at a heating rate of 10 °C min−1 and (Tc)onset were noted. The values (Tc)onset for bulk IL, #IG2 and #IG3 are −76, −47 and −60 °C, respectively.
For studying isothermal crystallization kinetics process, the crystallization temperatures were chosen 2 to 8 °C above the (Tc)onset. The isothermal crystallization temperatures, (Tc)iso, used were −70, −72 and −74 °C for pure IL; −40,−41, −43 °C for #IG2 and −55, −57, −59 °C for #IG3, respectively. For carrying out experiment on isothermal crystallization kinetics, samples were first cooled to −120 °C and then heated to ∼20 °C below the (Tc)onset @ 5 °C min−1 and then quenched rapidly @ 50 °C min−1, to various crystallization temperatures. For the deconvolution of the experimental crystallization curves, PeakFit v4.12 was used. It identifies the peak by finding local maxima in a smoothed data stream; second peak was then added where residuals occur.
X-ray photoelectron spectroscopy (XPS) technique was used to get an idea about the chemical interaction and identification of electronic states of the IL in confined system. XPS study was carried out using VSW-ESCA photoelectron spectrometer (with AlKα unmonochromatized X-rays having energy of ∼1486.6 eV). The resolution of the instrument was ∼1.0 eV. Binding energy (B.E.) of C1s ∼284.6 eV was taken as reference to correct the shift in binding energy (B.E.) of core levels due to charging effect. XPSPEAK4.1 software was used for the deconvolution of the XPS B.E. peaks.46 Thus the obtained B.E. peak position was used for the interpretation of the spectra.
Thermal conductivity of the IGs was measured using pellets of #IG2 and #IG3, which were prepared at a load of 3 tons and measurements have been made at room temperature using recently developed transient plane source (TPS) technique also called the Gustafsson probe or the hot disk (HD) technique.47
The method is based on the use of a transiently heated plane sensor which consists of concentric circles coated by a thin polymer with good chemical resistance and mechanical properties on both sides. The concentric circles are made into a double spiral so that current can be fed from one end to the other. To measure the thermal conductivity, TPS sensor is placed between two pieces of the sample material to be tested. One of the main advantages of transient techniques over steady state techniques is the influence of contact resistance that can be removed in the analysis of experimental data. This enables accurate measurement over a wide range of thermal conductivity for a variety of materials.
Fig. 2 Heat flow vs. time plots during isothermal crystallization for ILs and #IGs, where (a–c) correspond to solid phase 1 and (d–f) correspond to solid phase 2 present in the material. |
The relative crystallinity (α) at a time ‘t’ can be evaluated using the DSC exothermic thermograms (Fig. 2), which is defined as the ratio of crystallinity at any time ‘t’ to the crystallinity when time approaches ‘infinity’ as given below50
(1) |
Using eqn (1), the relative crystallinity (α) generated at any time ‘t’ for pure IL and for IL in confinement are plotted as a function of time (t) at various crystallization temperatures in Fig. 3. Fraction of the IL transformed to crystallized state with time for IL in bulk and in confinement at three different crystallization temperatures are shown in Fig. 3(a)–(f) [where, Fig. 3(a) and (d) for IL, Fig. 3(b) and (e) for #IG2 and Fig. 3(c) and (f) for #IG3 corresponding to first and second solid phases respectively]. This has been used to find out the value of crystallization half time (t1/2) which is the time needed to attain 50% crystallization of the system. The values of t1/2 are given in Table 1. A comparison of results of pure IL with those of #IGs shows that IL, [EMIM][BF4] confined in silica matrix takes longer time (∼150–580 s) to crystallize in comparison to the neat IL (∼70–100 s). The same feature of delayed crystallization of confined IL in comparison to the neat IL has been observed for the second crystallization peak present in the IL, which shows that crystallization rates become slower in confinement. The slowing down of the crystallization rate of IL in confinement may be due to interactive forces acting between the pore wall surface which hinders the process of crystallization. For IL in confinement, besides electrostatic (cation–anion, cation–cation & anion–anion)51 and van der Waals interactions; surface interactions (H-bonding, liquid–solid interface etc.) with the silica pore wall are also possible.3,32,39,51–53 Among these various interactions, surface interactions play dominant role in confinement and decide the crystallization rate because surface interactions will oppose the molecules to arrange and support the delayed crystallization process in confinement by hindering the motion of IL.54 Detail explanation of surface interactions and delayed crystallization have been discussed in the next section related to X-ray photoelectron spectroscopy (XPS) and transient plane source (TPS) studies.
Fig. 3 The plot of fraction transformed vs. crystallization time for ILs and #IGs, where (a–c) correspond to solid phase 1 and (d–f) correspond to solid phase 2 present in the material. |
Samples | (Tc)iso (°C) | n1 | n2 | K1 (s−n) | K2 (s−n) | t1/2 (s) | |
---|---|---|---|---|---|---|---|
t1/2(1) (s) | t1/2(2) (s) | ||||||
Pure IL | −70 | 2.32 | 2.42 | 7.53 × 10−5 | 6.28 × 10−7 | 70 | 94 |
−72 | 2.28 | 2.31 | 8.23 × 10−5 | 2.82 × 10−6 | 73 | 137 | |
−74 | 2.04 | 2.51 | 7.88 × 10−5 | 1.25 × 10−7 | 106 | 227 | |
#IG2 | −40 | 1.09 | 1.05 | 4.53 × 10−4 | 1.37 × 10−4 | 208 | 406 |
−41 | 1.03 | 1.00 | 2.66 × 10−4 | 1.18 × 10−5 | 278 | 460 | |
−43 | 1.04 | 1.05 | 2.46 × 10−4 | 3.66 × 10−5 | 334 | 619 | |
#IG3 | −55 | 1.17 | 1.10 | 4.07 × 10−4 | 5.51 × 10−5 | 152 | 307 |
−57 | 1.09 | 1.10 | 3.78 × 10−4 | 6.83 × 10−6 | 225 | 442 | |
−59 | 1.06 | 1.06 | 2.75 × 10−4 | 1.98 × 10−5 | 316 | 583 |
Isothermal crystallization kinetics behavior of IL in bulk and in confinement has been interpreted using Avrami equation. For obtaining more information about the isothermal crystallization kinetics, the evolution of the relative crystallinity (α) with the crystallization time (t) was assumed as55,56
α = 1 − exp(−Ktn) | (2) |
The eqn (2) can be rewritten as
ln[−ln(1 − α)] = lnK + nlnt | (3) |
Thus, if the experimental kinetic data obeys the Avarmi equation, then the plot of ln[−ln(1 − α)] as a function of lnt would be a straight line, which is useful in finding the values of n and K. Fig. 4 shows, the complete Avrami plots for pure IL, #IG2 and #IG3 at different isotherm temperatures. Avrami equation is generally applicable at initial stages of crystallization (i.e., at lower times) and the straight line behavior of ln[−ln(1 − α)] vs. lnt is applicable. Avrami exponent (n) and crystallization rate constant (K) can be obtained by knowing the slope and intercept of the straight line respectively, using Avrami plots at initial stages of crystallization (Fig. 5). Values of Avrami exponents (n1 and n2), crystallization constants (K1 and K2) and crystallization half-times (t1/2(1) and t1/2(2)) at various crystallization temperatures corresponding to the two phases present in the material for the IL and IGs are given in Table 1.
Fig. 4 Complete Avrami plots using an isothermal method for ILs and #IGs, where (a–c) correspond to solid phase 1 and (d–f) correspond to solid phase 2 present in the material. |
The values of Avrami exponents n1 and n2 (corresponding to the both phases present in the IL) for pure IL are respectively 2.32 and 2.42 (at crystallization temperature Tc = −70 °C), 2.28 and 2.31 (at crystallization temperature Tc = −72 °C) and 2.04 and 2.51 (at crystallization temperature Tc = −74 °C) (see Table 1) suggesting three dimensional crystal growth for IL in bulk while incorporation of IL in SiO2 matrix changes the crystallization behavior of IL. For all crystallization temperatures, obtained values of ‘n1 and n2’ for #IG2 and #IG3 are nearly equal to 1 which indicates a one dimensional crystal growth.
To get a sufficient evidence in favour of this delayed crystallization rate, we carried out simultaneous measurement of X-ray photoelectron spectroscopy (XPS) and transient plane source (TPS) to explore the reason for the delayed crystallization rate in confinement as discussed below.
Fig. 7 Deconvoluted XPS spectra of (a and e) B 1s, (b and f) N 1s, (c and g) F 1s, (d and h) C 1s respectively for #IG2 and #IG3. |
Fig. 8 Deconvoluted XPS spectra of (a–c) O 1s, (d–f) Si 2p respectively for pure silica, #IG2 and #IG3. |
The observed B.E. positions for B1s of IL is ∼193.4 eV and 192.8 eV for #IG2 and #IG3 (Fig. 7(a) and (e)), respectively, which has been shifted to lower B.E. side as compared to the reported bulk value for B 1s (∼195.6 eV).58 Similarly, the B.E. peak positions of N 1s and F 1s are also found to be shifted upon confinement to 401.8 eV (#IG2) [Fig. 7(b)] and 401.6 eV (#IG3) [Fig. 7(f)] for N 1s and 686.6 eV (#IG2) [Fig. 7(c)] and 686.5 eV (#IG3) [Fig. 7(g)] for F 1s as compared to their bulk B.E. positions of ∼398.4 eV (for N 1s) and 688.3 eV (for F 1s), respectively. The B.E. peak position for C 1s ∼286.5 eV reported earlier for IL showed the sp2 hybridized carbons in the hetro-aromatic ring of the imidazolium and sp3 hybridized state carbons in ethyl and methyl groups bonding directly with nitrogen atom.58 For our sample, the B.E. positions for C 1s were found to be shifted in the confined systems (Fig. 7(d) and (h)). Both, #IG2 and #IG3 show the change in the BE peaks in confinement as compared with the earlier reported value (∼286.5 eV) (ref. 58 and 59) for C 1s of the IL associated with aliphatic chain as well as rings which appears at 284.4, 285.4, 286.3 and 287.0 eV for #IG2 [Fig. 7(d)]; and at 284.4, 284.8, 286.2 and 288.6 eV for #IG3 [Fig. 7(h)]. It corresponds to the sp2 hybridized carbons in the hetro-aromatic ring of the imidazolium and sp3 hybridized state carbons in ethyl and methyl group bonding directly with nitrogen atom.
To further confirm whether B.E. positions related to O 1s and Si 2p of the pure silica is changed due to the surface interactions or not, we analysed the deconvoluted detailed scan XPS spectra of pure silica and IL confined in silica samples (Fig. 8(a)–(f)). The deconvoluted XPS spectra of pure silica [Fig. 8(a)] for O1s show two B.E. peaks at ∼532.6 and ∼532.4 eV due to oxide of SiO2.60 It has been observed that B.E. positions of elemental O 1s shift towards higher B.E. side by ∼0.7 eV for both #IG2 and #IG3 as compared to its elemental value of pure silica ∼532.6 eV (ref. 60) [Fig. 8(a)–(c)]. This may be due to interaction of IL cations and anions with the Si–O of the silica matrix. The deconvoluted XPS spectra of pure silica for Si 2p show single B.E. peak at ∼102.9 eV (ref. 60) due to presence of elemental Si [Fig. 8(d)], while silica with confined IL shows two B.E. peaks at ∼102.9 and ∼103.4 eV for #IG2 and ∼101.7 and ∼103.3 eV for #IG3 [Fig. 8(e) and (f)]. The earlier one is due to Si element of SiO2 and later one (peak of Si 2p towards higher B.E. side) is due to the interaction of IL with the silica pore wall surface. This hinders the motion of IL in confinement and delayed the crystallization process as observed by us in isothermal crystallization kinetics studies using DSC.
The observed change in the B.E. positions for all the elements viz. Si 2p, O 1s, B 1s, N 1s, F 1s and C 1s have been attributed to the surface interactions of confined IL with the silica nano-pores and results as a change in the energy of the confined IL due to spatial hindrance offered by silica pore-wall and hence, responsible for delay in crystallization rate upon confinement. Transient plane source (TPS) measurement is used to further confirm the cause of delayed crystallization.
We can not ignore the factors which act as barriers to the heat transfer during the process of crystallization by which total time of crystallization may increase or decrease. The work of Grady et al.61 in 2001 shows that thermal conductivity of the material limits the rate of heat transfer and hence affects the crystallization rates so the role of thermal conductivity of the synthesized material is important. The values of thermal conductivities for the pure silica, #IG2 and #IG3 are 0.8, 1.87, 1.76 W m−1 K−1 respectively, where as for pure ionic liquid [EMIM][BF4] it is 0.2 W m−1 K−1.62 For pure IL, thermal conductivity value is quite low (∼0.2 W m−1 K−1) and also has the less crystallization half time (t1/2) ∼ 100 s. It is notable that, mixing of two materials with different thermal conductivities (i.e. pure silica and IL) increases the value of thermal conductivity and correspondingly crystallization half times of the resulting IGs. This may be due to the effect of thermal conduction; as thermal conductivity of #IG2 (0.25 mol% of IL) is 1.87 W m−1 K−1, correspondingly the crystallization half time (t1/2) also increased to ∼550 s and as the amount of IL is further increased in #IG3 (0.35 mol% of IL), thermal conductivity decreased to 1.76 W m−1 K−1, and the value of crystallization half time (t1/2) decreased to ∼500 s. To explain this phenomenon at the molecular level, it can be considered that silica matrix acts as a sink for the confined system as it has higher value of thermal conductivity compared to the IL.61 This supports the faster heat transfer away from the crystal growth during crystallization process in confinement and hence will take much time in complete crystallization and will make crystallization delayed while pure IL, due to low value of thermal conductivity, will utilize all absorbed heats to crystallize its constituent molecules because there are no heat sinks which can draw heat away from the molecules and will take less time in complete crystallization.
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