Jiamin Caoa,
Shan Chena,
Zhe Qib,
Zuo Xiaoa,
Jizheng Wang*b and
Liming Ding*a
aNational Center for Nanoscience and Technology, Beijing 100190, China. E-mail: opv.china@yahoo.com
bInstitute of Chemistry, Beijing 100190, China. E-mail: jizheng@iccas.ac.cn
First published on 13th December 2013
A D–A polymer, PSeTPTI, was developed by copolymerizing a pentacyclic acceptor unit TPTI with a selenophene unit. PSeTPTI possesses a narrow optical bandgap, a low-lying HOMO energy level, and a high hole mobility of 0.26 cm2 V−1 s−1. PSeTPTI/PC71BM solar cells demonstrate a PCE of 6.04%, which is the highest efficiency for the conjugated copolymers using selenophene as the donor unit.
DIO [vol%] | Voc [V] | Jsc [mA cm−2] | FF [%] | PCE [%] |
---|---|---|---|---|
3 | 0.85 | 11.10 | 64 | 6.04 |
Without | 0.89 | 1.95 | 64 | 1.12 |
The synthesis of compound TPTI-Br is described in the literature.5 Target polymer PSeTPTI was synthesized through Stille reaction of TPTI-Br and 2,5-bis(trimethylstannyl)selenophene in toluene at 115 °C. The crude product was purified by Soxhlet extraction using methanol, hexane, and chloroform in sequence. The chloroform fraction was added into methanol to obtain PSeTPTI as dark blue solid in 97% yield. The chemical structure of PSeTPTI was confirmed by 1H NMR and elemental analysis. PSeTPTI is highly soluble in common organic solvents, such as toluene, chloroform, chlorobenzene, and o-dichlorobenzene. From gel permeation chromatography (GPC) against polystyrene standards in THF eluent, the number-average molecular weight (Mn) and the polydispersity index (PDI) of the polymer are 34.9 kDa and 3.51, respectively. PSeTPTI shows good thermal stability with a decomposition temperature Td of 417 °C (5% wt loss) (Fig. S1†).
As shown in Fig. 1, PSeTPTI exhibits two absorption peaks at 548 and 602 nm in chloroform solution. The film absorption peak at 638 nm originates from interchain π–π stacking. The absorption onset for PSeTPTI film is 701 nm, corresponding to an optical bandgap of 1.77 eV, which is narrower than that of its analogue PThTPTI (1.86 eV).6,9b The electrochemical property of PSeTPTI film was studied by cyclic voltammetry (CV) and all potentials were calibrated against Fc/Fc+ redox couple. As shown in Fig. S2†, the oxidation onset potential (Eonox) and the reduction onset potential (Eonred) of PSeTPTI are 0.61 and −1.92 V, respectively. According to the empirical formulae: HOMO = −(Eonox + 4.8) eV, LUMO = −(Eonred + 4.8) eV,11 the HOMO and LUMO energy levels of the polymer are calculated to be −5.41 and −2.88 eV, respectively. Compared with PThTPTI, PSeTPTI possesses similar HOMO energy level and lower LUMO energy level.10b Voc is proportional to the difference between the HOMO energy level of donor materials and the LUMO energy level of acceptor materials.12 Deep HOMO energy level should render PSeTPTI high Voc and good stability against oxidization.9b The electrochemical bandgap of PSeTPTI is 2.53 eV, 0.76 eV higher than the optical bandgap, which results from the interface barrier between polymer films and electrode surface.13
Solar cells with a structure of ITO/PEDOT:PSS/PSeTPTI:PC71BM/Ca/Al were fabricated to evaluate the photovoltaic performance of PSeTPTI. After optimization, solar cells with a D–A ratio of 1:
1 (w/w), an active layer thickness of 140 nm, and 3 vol% 1,8-diiodooctane (DIO) gave the best result (see ESI†). The best device afforded a PCE of 6.04%, with a Voc of 0.85 V, a Jsc of 11.10 mA cm−2, and a FF of 64%. DIO addition greatly increases photocurrent by reducing domain size and increasing D–A interfaces in the active layer.14 External quantum efficiency (EQE) spectra indicate that the device with 3 vol% DIO exhibits much higher EQE values than the device without DIO. The integrated currents from EQE curves for the devices without and with DIO are 1.87 and 10.61 mA cm−2, respectively, which consist with the Jsc values from J–V measurements (Fig. 2).
Bottom-gate and bottom-contact organic field-effect transistors (OFETs) were fabricated to explore the charge-transporting property of PSeTPTI film. As shown in Fig. 3, the devices show p-type behavior with typical transfer and output curves. PSeTPTI-based OFET exhibited a high hole mobility of 0.26 cm2 V−1 s−1 with a large on/off current ratio of 1.89 × 108 and a low threshold voltage of −6.51 V. In the annealing temperature range of 20–160 °C, the polymer showed similar mobility (Fig. S3†). The high mobility of PSeTPTI accounts for its good Jsc and FF in solar cells. X-ray diffraction (XRD) pattern of PSeTPTI films shows two diffraction peaks at 2θ = 4.46° and 25.12°, respectively (Fig. S4†). The primary peak at 4.46° corresponds to an interlayer d-spacing of 19.80 Å, and the peak at 25.12° corresponds to a d-spacing of 3.54 Å for π–π stacking. The lamellar structures existing in PSeTPTI film lead to its high mobility.
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Fig. 3 (a) Transfer and (b) output curves for PSeTPTI-based OFETs. Device dimension: channel length (L) = 50 μm; channel width (W) = 1400 μm. |
In summary, a D–A conjugated polymer, PSeTPTI, based on a pentacyclic acceptor unit, TPTI, and selenophene donor unit, was developed. The optical bandgap of PThTPTI was decreased successfully by replacing thiophene unit with selenophene unit. PSeTPTI possesses good solubility, excellent thermal stability, narrow optical bandgap, low-lying HOMO energy level, and high mobility. PSeTPTI/PC71BM solar cells demonstrate a PCE of 6.04%, which is the highest efficiency for the D–A copolymers using selenophene as the donor unit.
Footnote |
† Electronic supplementary information (ESI) available: Experimental details including synthesis, measurements, and instruments. See DOI: 10.1039/c3ra47098a |
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