Orientation control of Ge thin films by underlayer-selected Al-induced crystallization
Abstract
The crystal orientation of a polycrystalline Ge thin film is controlled by selecting the underlayer material during Al-induced low-temperature (325 °C) crystallization. A TiN underlayer yields highly (111)-oriented Ge with large grains (nearly 100 μm), which is useful as a buffer layer for III–V compound semiconductors and other advanced materials.