Issue 13, 2014
From the journal:

CrystEngComm

Orientation control of Ge thin films by underlayer-selected Al-induced crystallization

K. Toko,*a   K. Nakazawa,a   N. Saitoh,b   N. Yoshizawa,b   N. Usamic  and  T. Suemasua  

* Corresponding authors

a Institute of Applied Physics, University of Tsukuba, Ibaraki 305-8573, Tsukuba, Japan

b Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569, Japan

c Materials, Physics and Energy Engineering, Nagoya University, Aichi 464-8603, Japan

Abstract

The crystal orientation of a polycrystalline Ge thin film is controlled by selecting the underlayer material during Al-induced low-temperature (325 °C) crystallization. A TiN underlayer yields highly (111)-oriented Ge with large grains (nearly 100 μm), which is useful as a buffer layer for III–V compound semiconductors and other advanced materials.

Graphical abstract: Orientation control of Ge thin films by underlayer-selected Al-induced crystallization

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Article information

DOI
https://doi.org/10.1039/C3CE42057D
Article type
Communication
Submitted
10 Oct 2013
Accepted
23 Jan 2014
First published
20 Feb 2014

CrystEngComm, 2014,16, 2578-2583

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Orientation control of Ge thin films by underlayer-selected Al-induced crystallization

K. Toko, K. Nakazawa, N. Saitoh, N. Yoshizawa, N. Usami and T. Suemasu, CrystEngComm, 2014, 16, 2578 DOI: 10.1039/C3CE42057D

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