Issue 45, 2013
From the journal:

RSC Advances

Crystallography and cathodoluminescence of pyramid-like GaN nanorods epitaxially grown on a sapphire substrate†

Baodan Liu,*a   Zaien Wang,a   Fang Yuan,a   Dierre Benjamin,b   Takashi Sekiguchic  and  Xin Jiang*a  

* Corresponding authors

a Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72 Wenhua Road, Shenyang 110016, China
E-mail: baodanliu@imr.ac.cn, xjiang@imr.ac.cn
Fax: +86-24-83970876
Tel: +86-24-83970875

b International Center for Young Scientists (ICYS)-MANA, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, Japan

c World Premier International (WPI) Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1–1, Tsukuba, Ibaraki, Japan

Abstract

Pyramid-like GaN nanorods have been epitaxially grown on a [001]-oriented sapphire substrate. The as-synthesized GaN nanorods exhibited decent crystal quality and a strong luminescence in UV range.

Graphical abstract: Crystallography and cathodoluminescence of pyramid-like GaN nanorods epitaxially grown on a sapphire substrate

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Article information

DOI
https://doi.org/10.1039/C3RA44371J
Article type
Communication
Submitted
14 Aug 2013
Accepted
30 Sep 2013
First published
03 Oct 2013

RSC Adv., 2013,3, 22914-22917

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Crystallography and cathodoluminescence of pyramid-like GaN nanorods epitaxially grown on a sapphire substrate

B. Liu, Z. Wang, F. Yuan, D. Benjamin, T. Sekiguchi and X. Jiang, RSC Adv., 2013, 3, 22914 DOI: 10.1039/C3RA44371J

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