A high thermoelectric figure of merit ZT > 1 in Ba heavily doped BiCuSeO oxyselenides†
Abstract
A high ZT value of ∼1.1 at 923 K in the BiCuSeO system is achieved via heavily doping with Ba and refining grain sizes (200–400 nm), which is higher than any thermoelectric 
- This article is part of the themed collection: Thermoelectrics
 
                



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