Issue 4, 2012
From the journal:

CrystEngComm

Precise control on the growth of SiC nanowires†

Wei Feng,ab   Jingtao Ma*a  and  Weiyou Yang*b  

* Corresponding authors

a State Key Laboratory of New Ceramics and Fine Processing, Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing, P. R. China
E-mail: majingtao@mail.tsinghua.edu.cn

b Institute of Materials, Ningbo University of Technology, Ningbo City, P. R. China
E-mail: weiyouyang@tsinghua.org.cn
Fax: +86-574-87081221
Tel: +86-574-87080966

Abstract

We report the precisely controlled growth of SiC nanowires based upon the VLS process by tailoring the cooling rates, which could open a novel and general strategy for well-controlled growth of 1D semiconductor nanostructures.

Graphical abstract: Precise control on the growth of SiC nanowires

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Article information

DOI
https://doi.org/10.1039/C2CE06569J
Article type
Communication
Submitted
23 Nov 2011
Accepted
09 Dec 2011
First published
23 Dec 2011

CrystEngComm, 2012,14, 1210-1212

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Precise control on the growth of SiC nanowires

W. Feng, J. Ma and W. Yang, CrystEngComm, 2012, 14, 1210 DOI: 10.1039/C2CE06569J

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