Issue 37, 2012
From the journal:

Chemical Communications

High-order tunneling processes in single-porphyrin transistors†

Jeong Tae Lee,‡ab   Dong-Hun Chae,‡§c   Zhen Yao*c  and  Jonathan L. Sessler*a  

* Corresponding authors

a Department of Chemistry and Biochemistry, 1 University Station-A5300, The University of Texas at Austin, Austin, USA
E-mail: sessler@mail.utexas.edu
Fax: +1 512 471-7550
Tel: +1 512 471-5009

b Department of Chemistry and Institute for Applied Chemistry, 1 Hallymdaehak-gil, Hallym University, Chuncheon, Gangwon-do 200-702, Korea
E-mail: jtshl@hallym.ac.kr
Fax: +82 33 256 3421
Tel: +82 33 248 2071

c Department of Physics, 1 University Station-C1600, The University of Texas at Austin, Austin, Texas 78712-0264, USA
E-mail: yao@physics.utexas.edu
Fax: +1 512 471-9637
Tel: +1 512 471-1058

Abstract

Cotunneling and the Kondo effect are observed in single-electron transistors incorporating cobalt-porphyrins. These effects are attributed to high-order tunneling and strong coupling between the electrodes and the intervening porphyrin.

Graphical abstract: High-order tunneling processes in single-porphyrin transistors

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Article information

DOI
https://doi.org/10.1039/C2CC31371E
Article type
Communication
Submitted
24 Feb 2012
Accepted
14 Mar 2012
First published
14 Mar 2012

Chem. Commun., 2012,48, 4420-4422

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High-order tunneling processes in single-porphyrin transistors

J. T. Lee, D. Chae, Z. Yao and J. L. Sessler, Chem. Commun., 2012, 48, 4420 DOI: 10.1039/C2CC31371E

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