Issue 9, 2002

The decomposition mechanism of p-chloromethylphenyltrimethoxysiloxane self-assembled monolayers on vacuum ultraviolet irradiation

Abstract

The decomposition mechanism of p-chloromethylphenyltrimethoxysiloxane (CMPS) self-assembled monolayers (SAMs) due to vacuum ultraviolet (VUV) irradiation at a wavelength of 172 nm has been studied based on water repellency, X-ray photoelectron spectroscopy (XPS) and Kelvin probe force microscopy (KPFM). The CMPS-SAMs were prepared through chemical vapor deposition at 100 °C. The water contact angle increased dramatically within the first 30 min, reaching a plateau at this point. The saturated water contact angle was 76°. Next, the CMPS-SAMs were irradiated at under 10 Pa from 0 to 30 min. The CMPS-SAMs irradiated for 15 and 30 min were covered with carboxylated hydrocarbon fragments and silanol groups, respectively. KPFM measurements for micro-patterned SAMs, i.e. CMPS/CO2H and CMPS/SiOH, showed that the surface potential of the carboxylated and silanol regions were −16 and +19 mV vs. CMPS-SAM, respectively. The former negative surface potential difference originated in the electronegativity of the CO2H fragments. These results provide us with a route to prepare an organic template for various fields such as bio-sensors, chemical sensors and electrolytes.

Graphical abstract: The decomposition mechanism of p-chloromethylphenyltrimethoxysiloxane self-assembled monolayers on vacuum ultraviolet irradiation

Article information

Article type
Paper
Submitted
15 Apr 2002
Accepted
10 Jun 2002
First published
19 Jul 2002

J. Mater. Chem., 2002,12, 2684-2687

The decomposition mechanism of p-chloromethylphenyltrimethoxysiloxane self-assembled monolayers on vacuum ultraviolet irradiation

N. Saito, K. Hayashi, H. Sugimura and O. Takai, J. Mater. Chem., 2002, 12, 2684 DOI: 10.1039/B203643F

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Spotlight

Advertisements