Abstract

New atomic emission spectrometry (AES) techniques for the analysis of pure gallium involving spectral excitation in the region before the junction of the jets of a two-jet arc plasmatron have been developed. The technique of direct AES analysis enables the simultaneous measurement of 34 impurities with detection limits of n × 10⁻⁴–n × 10⁻⁶%. The technique with preconcentration of impurities involves distilling off the sample base in the form of GaCl₃·NH₃ and enables the determination of at least 23 impurities in gallium with detection limits of n × 10⁻⁵–n × 10⁻⁷%.