Polycrystalline GexSi1 − x thin film formation by chemical vapor deposition using silicon difluoride and germanium tetrachloride as precursors

Chi Young Lee; Wen Tuan Chang; Chao Shiuan Liu

doi:10.1039/B004509H

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Chi Young Lee,^a Wen Tuan Chang^b and Chao Shiuan Liu^b

Author affiliations

^a Materials Science Center, National Tsing Hua University, Hsinchu, Taiwan, R. O. C
E-mail: cylee@mx.nthu.edu.tw

^b Department of Chemistry, National Tsing Hua University, Hsinchu, Taiwan, R. O. C.

Abstract

Ge_xSi_1 − x thin films (x = 0.03–0.75) were grown on Si(111), quartz and graphite by LPCVD using SiF₂ and GeCl₄ as the precursors at 450–700 °C. Thin films prepared at 550–700 °C contained polycrystalline Ge_xSi_1 − x. The composition of the thin film can be controlled by adjusting the reaction temperature and the relative inlet quantity of GeCl₄. A linear correlation between the lattice parameters of the prepared Ge_xSi_1 − x thin films and the Ge contents x is established. A plausible reaction mechanism is proposed and discussed.

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Article information

DOI: https://doi.org/10.1039/B004509H
Article type: Paper
Submitted: 06 Jun 2000
Accepted: 17 Aug 2000
First published: 03 Jan 2001

Download Citation

J. Mater. Chem., 2001,11, 687-690

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