View PDF Version
 
DOI: 10.1039/A906054E (Paper) Reference Section for: J. Mater. Chem., 1999, 9, 2445-2448

Study of chemical vapor deposition reaction between tungsten hexafluoride and silicon difluoride

(Note: The full text of this document is currently only available in the PDF Version )

Chi-Young Lee and Wen-Chung Yang

Abstract

A low-pressure chemical vapor system which deposits tungsten based thin films on a substrate, using a horizontal hot-wall reactor has been studied. WF6 and SiF2 were used as precursors to deposit materials containing tungsten, at temperatures between 100 and 800[thin space (1/6-em)]°C. Results demonstrate that a deposition temperature below 400[thin space (1/6-em)]°C led to polycrystalline tungsten and silicon oxide. Tungsten films deposited at higher temperature (300–400[thin space (1/6-em)]°C) were normally present in the α structure while for those tungsten films deposited at lower temperature (<300[thin space (1/6-em)]°C), XRD patterns indicated mixed α and β phases. As the reaction temperature was increased to ≥500[thin space (1/6-em)]°C, polycrystalline tungsten silicide and polycrystalline silicon were deposited on the surface of the substrate. This study investigates the effect of different processing conditions for forming W and WSi2 and the role of SiF2 in their formation.

References

  1. C. E. Morosanu and V. Soltuz, Thin Solid Films, 1978, 52, 181 CrossRef CAS.
  2. T. Kodas Toivo and J. Hampden Smith Mark, The Chemistry of Metal CVD, Weinheim, VCH Publishers Inc., New York, 1994, ch. 3 Search PubMed.
  3. Y. Pauleau, P. Lami and J. Pelletier, Chem. Abstr., 1989, 111, 144567 Search PubMed.
  4. C. C. Chen, J. L. Yu, C. Y. Lee, C. S. Liu and H. T. Chiu, J. Mater. Chem., 1992, 2, 983 RSC.
  5. C. Y. Lee, J. L. Huang and C. S. Liu, J. Mater. Chem., 1996, 6, 1131 RSC.
  6. P. L. Timms, R. A. Kent, T. C. Ehlert and J. L. Margrave, J. Am. Chem. Soc., 1965, 87, 2824 CrossRef CAS.
  7. W. K. Kern and D. A. Puotinan, RCA Rev., 1970, 187 Search PubMed.
  8. J. R. McCreary, R. J. Thorn and L. C. Wagner, J. Non-Cryst. Solids, 1977, 23, 293 CAS.
  9. W. W. Lee and R. R. Reeves, Mater. Res. Soc. Symp. Proc., 1992, 250, 137 CAS.
  10. Powder Diffraction File, JCPDS International Center for Diffraction Data, Swarthmore, PA, 1982; file no. 11–0195 for tungsten silicide, 23–0064 for graphite and 27–1402 for silicon.
  11. (a) K. A. Gesheva, G. I. Stoyanov, D. S. GoGova and G. D. Beshkov, Mater. Res. Soc. Proc., 1996, 402, 637 CAS; (b) T. O. Sedgwick, F. M. d'Heurle and S. A. Cohen, J. Electrochem. Soc., 1984, 10, 2446.
  12. M. Janai, S. Aftergood, R. B. Weil and B. Pratt, J. Electrochem. Soc., 1981, 128, 2660 CAS.
  13. M. S. Chandrasekharaiah and J. L. Margrave, J. Phys. Chem. Ref. Data., 1993, 22, 1459 CAS.
Click here to see how this site uses Cookies. View our privacy policy here.