Surface-controlled growth of magnesium oxide thin films by atomic layer epitaxy

Abstract

Magnesium oxide thin films were deposited on soda lime and Si(100) substrates by atomic layer epitaxy from Mg(thd)₂ and ozone. The depositions were carried out at 180–450 °C, where the growth parameters were studied in detail. A narrow temperature range of 225–250 °C was found where the growth was surface- controlled with growth rates of 0.27 and 0.22 Å cycle^–1 on glass and silicon, respectively. MgO films were characterized by X-ray diffraction (XRD), Rutherford backscattering (RBS), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM).

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