Formation of hydrogenated Si₂O films by UV laser photolysis of disiloxane

Abstract

ArF laser-induced photolysis of disiloxane in the gas phase results in the cleavage of the Si–H bonds and affords chemical vapour deposition of novel hydrogenated silicon suboxide films. The films are sensitive to ambient atmosphere and were characterised by FTIR and XP spectroscopy and by SEM.

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