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DOI: 10.1039/A900503J (Paper) Reference Section for: J. Mater. Chem., 1999, 9, 1289-1292

Deposition of tetragonal β-In2S3 thin films from tris(N,N-diisopropylmonothiocarbamato)indium(III), In(SOCNiPr2)3, by low pressure metal-organic chemical vapour deposition

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Graeme A. Horley, Paul O'Brien, Jin-Ho Park, Andrew J. P. White and David J. Williams

Abstract

Tris(N,N-diisopropylmonothiocarbamato)indium(III), In(SOCNiPr2)3, has been prepared by the reaction of indium(III) chloride and lithium N,N-diisopropylmonothiocarbamate. In the solid state, the complex is a distorted trigonal prismatic monomer with a meridional configuration, as characterised by single-crystal X-ray diffraction. In(SOCNiPr2)3 has been used as a single-source precursor for the deposition of tetragonal β-In2S3 thin films by low pressure metal-organic chemical vapour deposition (LP-MOCVD) at temperatures ranging from 300 to 450[thin space (1/6-em)]°C, on borosilicate glass substrates.

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