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DOI: 10.1039/A805757E (Paper) Reference Section for: J. Mater. Chem., 1999, 9, 249-252

Molecular design of dopant precursors for atomic layer epitaxy of SrS:Ce

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William S. Rees, Jr., Oliver Just and Donald S. Van Derveer

Abstract

Two cerium compounds, Ce{N[Si(CH3)3]2}3 and Ce(tmhd)4 (tmhd=2,2,6,6-tetramethylheptane-3,5-dionate), have been evaluated for utilization in the preparation of thin films of SrS:Ce by atomic layer epitaxy (ALE). The resultant coatings have been characterized for use in electroluminescent (EL) devices. The observed emission maximum at 518 nm for the devices derived from Ce(tmhd)4 shifts to 480 nm for those resulting from Ce{N[Si(CH3)3]2}3. This shift may be correlated with the basicity of the ligand present on the dopant element.

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