Contrast of scanning ion microscope images compared with scanning electron microscope images for metals†

(Note: The full text of this document is currently only available in the PDF Version )

Y. Sakai, T, Yamada, T. Suzuki, T. Ichinokawa , T, Yamada, T. Suzuki, T. Ichinokawa , T. Suzuki and T. Ichinokawa


Abstract

The contrast of secondary electron images in scanning electron microscopy (SEM) is compared with that in scanning ion microscopy (SIM) for metals. The dependence of the secondary electron yield on atomic number in SEM is opposite to that in SIM. The secondary electron yields for electron bombardment increase with atomic number for metals, whereas those for ion bombardment decrease with increasing atomic number. The origin of these phenomena is discussed on the basis of the range profiles of these particles with respect to the surface.


References

  1. R. A. Baragiola, E. V. Alonso and A. Oliva-Florio, Phys. Rev. B, 1979, 19, 121 CrossRef CAS.
  2. J. Lindhard and M. Sharff, Phys. Rev., 1961, 124, 128 CrossRef CAS.
  3. H. E. Schiøtt, K. Dan. Vidensk. Selsk. Mat-Fys. Medd., 1965, 35, No. 9 Search PubMed.
  4. Ion Implantation, Sputtering and their Applications, ed. P. D. Townsend, J. C. Kelly and N. E. W. Hartley, Academic Press, London, 1976, ch. 2 Search PubMed.
Click here to see how this site uses Cookies. View our privacy policy here.