Structures of Ga(hfac)3 and In(hfac)3 (hfac = 1,1,1,5,5,5-hexafluoropentane-2,4-dionate) in the gas phase as studied by electron diffraction and ab initio calculations[hair space]

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Paul T. Brain, Michael Bühl, Heather E. Robertson, Andrew D. Jackson, Paul D. Lickiss, Donald MacKerracher, David W. H. Rankin, Dipti Shah and Walter Thiel


Abstract

The molecular structures of Ga(hfac)3 and In(hfac)3 (hfac = 1,1,1,5,5,5-hexafluoropentane-2,4-dionate) have been determined by gas-phase electron diffraction (GED) restrained by ab initio computations. The structures, with D3 symmetry, have a distorted octahedral arrangement of oxygen atoms about the central atom such that the E[hair space](hfac) planes are orientated at ca. 82 (E = Ga) and 81° (E = In) to one another. Theoretical computations at the SCF and DFT levels afford structures similar to those found experimentally but with less distorted EO6 octahedra, ca. 89 and 87° (DFT), respectively.


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