CVD preparation and characterization of tin dioxide films for electrochemical applications

Abstract

SnO₂ films have been succesfully prepared by chemical vapour deposition (CVD) by reaction of SnCl₂ with O₂ and a value of the activation energy of 58 kJ mol^-1 has been measured. The temperature range 450–500 °C has been found to be the optimum for the reaction with resistivities of the films of 9×10^-4 Ω cm on silicon and 6×10^-4 Ω cm on Pyrex. These two values are the lowest reported so far for SnO₂ films which have not been deliberately doped. For their use as transparent conducting films, a figure of merit of 9.87×10^-3 □ Ω^-1 was found for a 0.8 µm thick film; this is also the highest reported so far. Characterization of the films by XRD showed a preferred [200] orientation and the grain size obtained from the XRD and SEM micrographs was in excess of 0.4 µm. The SnO₂ films, when tested in an eletrochemical cell, were unstable. A surface electrochemical process has been suggested for the disintegration.

References

1. H. De Waal and F. Simonis, Thin Solid Films, 1981, 77, 253.
2. H. Haneko and K. Miyake, J. Appl. Phys., 1992, 53, 3629.
3. P. S. Reddy, S. Uthanna and P. J. Reddy, J. Vac. Sci. Technol. A, 1987, 5, 1688.
4. D. Belanger, J. D. Dodelet, B. A. Lombos and J. I. Dickson, J. Electrochem. Soc., 1985, 132, 1398.
5. A. Rohatgy, T. R. Viverito and L. H. Slack, J. Am. Ceram. Soc., 1974, 57, 6.
6. B. J. Baliga and S. K. Ghandi, J. Electrochem. Soc., 1976, 123, 941.
7. C. G. Granquist, Appl. Phys. A, 1993, 57, 19.
8. G. Sanon, R. Rup and A. Monsingh, Thin Solid Films, 1990, 190, 287.
9. T. P. Chow, M. Ghezzo and B. J. Baliga, J. Electrochem. Soc., 1982, 129, 1041.
10. R. Kotz, S. Stucki and B. Carcer, J. Appl. Electrochem., 1991, 21, 14.
11. P. C. Foller and C. W. Tobias, J. Electrochem. Soc., 1982, 129, 506.
12. J. P. Marton and D. A. Lepic, J. Electrochem. Soc., 1976, 123, 234.
13. N. Miyata and H. Kitahata, Thin Solid Films, 1985, 125, 33.
14. T. Feng, A. K. Ghosh and C. Fishman, J. Appl. Phys., 1979, 50, 8070.
15. T. M. Uen, K. F. Huang, M. S. Chen and Y. S. Gow, Thin Solid Films, 1988, 158, 69.
16. D. E. Carlson, J. Electrochem. Soc., 1975, 122, 1334.
17. Y. S. He, J. C. Campbell, R. C. Murphy, M. F. Arendt and J. S. Swinnea, J. Mater. Res., 1993, 8, 3131.
18. J. Kane, H. P. Schweizer and W. Kern, J. Electrochem. Soc., 1975, 122, 1144.
19. R. D. Torey and T. A. Raju, Thin Solid Films, 1985, 128, 181.
20. N. S. Murty, G. K. Bhogavat and S. R. Jawalear, Thin Solid Films, 1982, 92, 347.
21. F. M. Smits, Bell Systems Tech. J., 1958, 37, 711.
22. N. S. Murty and S. R. Jawalear, Thin Solid Films, 1983, 102, 283.
23. J. Bruneaux, H. Cachet, M. Froment and A. Messad, Electrochim. Acta, 1994, 39, 1251.
24. J. Kane, H. P. Schweizer and W. Kern, J. Electrochem. Soc., 1976, 123, 270.
25. A. F. Caroll and L. H. Slack, J. Electrochem. Soc., 1976, 123, 1889.
26. G. Haacke, J. Appl. Phys., 1976, 47, 4086.
27. H. J. Hovel, R. K. Willardson and A. C. Beer, Semicond. Semimet., 1975, 11, 86.
28. T. Nagatome, M. Endo and O. Omote, Jpn. J. Appl. Phys., 1979, 18, 103.
29. C. J. Giunta, D. A. Strickler and R. G. Gordon, J. Phys. Chem., 1993, 97, 2275.
30. M. Hecq, A. Dubois and J. Van Cakenberghe, Thin Solid Films, 1963, 18, 117.
31. G. Sanon, R. Rup and A. Monsingh, Phys. Status Solidi, 1991, 128, 109.
32. D. J. Goyal, C. Agashe, B. R. Morathe, M. G. Takwale and V. G. Bhide, J. Appl. Phys., 1993, 73, 7520.
33. D. Gilroy, personal communication.
34. G. B. Hoflund, Chem. Mater., 1994, 6, 562.
35. G. Barral, J. Guitton, C. Montella and F. Vergara, Surf. Technol., 1979, 8, 113.
36. M. S. El-Basiouny, S. A. Hassan and M. M. Hefny, Corrosion Sci., 1980, 20, 909.