Capacitance–voltage curve recovery of MOS capacitors passivated with BaF₂–BeF₂–SiO₂ –B₂O₃–P₂O₅ glasses

Abstract

The capacitance–voltage (C–V) characteristics of metal-oxide–silicon (MOS) capacitors passivated by bubbled BaF₂–BeF₂–SiO₂ –B₂O₃–P₂O₅ glasses with various water and fluoride contents have been investigated. As the absorption coefficients of OH^- ions increased, adverse effects on the recovery of hysteresis loops of the C–Vcurves and their shifts were observed. The water content is related closely to the fluoride content in these glasses. A bubbling technique for blowing dry air through the molten glass during melting was effective for the removal of OH^- ions in the fluoride-containing glasses.

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