Temperature-dependent study of the kinetics of Ta(a4F3/2) with O2, N2O, CO2 and NO

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Mark L. Campbell and Kelli L. Hooper


Abstract

The gas-phase reactivity of Ta(a4F3/2) with O2, N2O, CO2 and NO in the temperature range 296–548 K is reported. The room-temperature removal rate constants for the spin–orbit excited states (a4FJ, J=5/2, 7/2, 9/2) are reported for these oxidants and CH4. Tantalum atoms were produced by the photodissociation of tetracarbonyl cyclopentadienyl tantalum(0) [Ta(C5H5)(CO)4] and detected by laser-induced fluorescence. The reaction rate constants of the a4F3/2 ground state with O2, N2O, CO2 and NO are temperature dependent. The disappearance rates in the presence of all the reactants are independent of total pressure, indicating a bimolecular abstraction mechanism. The bimolecular rate constants are described in Arrhenius form by k(O2)=(1.7±0.2) ×10-10 exp(-7.8±0.4 kJ mol-1/RT) cm3 s-1, k(N2O)=(7.1±1.0)×10-11 exp(-13.6±0.6 kJ mol-1/RT) cm3 s-1, k(CO2)=(1.0±0.1)×10-10 exp(-26.8±0.5 kJ mol-1/RT) cm3 s-1 and k(NO)=(1.0±0.2)×10-10 exp(-1.6±0.8 kJ mol-1/RT) cm3 s-1 where the uncertainties are ±2σ. The removal rates of the spin–orbit excited states with O2, N2O, CO2 and NO are spin–orbit state dependent and are generally faster than for the ground state. The a4F3/2 ground state is unreactive with methane, although the spin–orbit excited states are quenched by methane. The a4F5/2, a4F7/2 and a4F9/2 states have second-order room-temperature removal rate constants in methane of 6.0×10-13, 9.5×10-13 and 2.3×10-11 cm3 s-1, respectively.


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