Photocurrent distribution across the interfacial region of the n-GaAs/electrolyte junction

Abstract

A scanning laser microscope has been used to study the photoelectrochemical etching of n-GaAs at the electrolyte interface. Results are presented that show directly, in a qualitative way, the distribution of interfacial charge transfer in the vicinity of microscopic surface defects and the effect of potential and electrolyte composition on this distribution.