Issue 1, 1990

Aluminium film growth by chemical vapour deposition of AlH3(NMe3)2

Abstract

The surface thermal decomposition mechanism of bistrimethylamine alane [AlH3(Me3N)2] on the Ga rich (4 × 1) GaAs(100) surface was studied by thermal desorption spectroscopy (TDS), high resolution electron energy loss spectroscopy (HREELS), and XPS and was found to result in the deposition of carbon free aluminium films.

Article information

Article type
Paper

J. Chem. Soc., Chem. Commun., 1990, 11-13

Aluminium film growth by chemical vapour deposition of AlH3(NMe3)2

A. T. S. Wee, A. J. Murrell, N. K. Singh, D. O'Hare and J. S. Foord, J. Chem. Soc., Chem. Commun., 1990, 11 DOI: 10.1039/C39900000011

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