Issue 2, 2021

Aza-substitution on naphthalene diimide-based conjugated polymers for n-type bottom gate/top contact polymer transistors under ambient conditions

Abstract

Four conjugated polymers based on naphthalene diimide (NDI) as the acceptor and thiophene–phenyl–thiophene with different aza-substitutions as co-units were synthesized. The aza-substitution gradually lowered the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) energy levels. The polymer with four aza-substitutions exhibited the deepest LUMO/HOMO energy level (−4.10/−6.01 eV). Consequently, organic field-effect transistors (OFETs) based on the bottom-gate/top-contact configuration exhibited unipolar electron transport characteristics even if the devices were exposed directly to ambient conditions. Furthermore, the corresponding devices also maintained their n-type transport behavior during long-term storage in air (>300 days). This work demonstrated that the incorporation of nitrogen atoms into NDI-based conjugated polymers for further lowering the energy levels is a feasible strategy for the construction of air-stable n-type unencapsulated OFETs.

Graphical abstract: Aza-substitution on naphthalene diimide-based conjugated polymers for n-type bottom gate/top contact polymer transistors under ambient conditions

Supplementary files

Article information

Article type
Paper
Submitted
20 Sep 2020
Accepted
20 Nov 2020
First published
25 Nov 2020

J. Mater. Chem. C, 2021,9, 633-639

Aza-substitution on naphthalene diimide-based conjugated polymers for n-type bottom gate/top contact polymer transistors under ambient conditions

G. Zhang, H. Yu, Y. Sun, W. Wang, Y. Zhao, L. Wang, L. Qiu and Y. Ding, J. Mater. Chem. C, 2021, 9, 633 DOI: 10.1039/D0TC04493H

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