Jump to main content
Jump to site search

Issue 40, 2020
Previous Article Next Article

All-inorganic and lead-free BiI3 thin film solar cells by iodization of BiSI thin films

Author affiliations

Abstract

Recently, the binary BiI3 semiconductor has emerged as a novel and potential absorbing material for thin film solar cells. In this work, high-quality BiI3 thin films are obtained by a two-step method via iodization of BiSI precursor thin films at low temperatures. The BiSI precursor solution is made via a Bi(OH)3/I2/butylamine/CS2 method. After the iodization process, the BiSI thin film transforms into a large-grain BiI3 absorber layer. The grain size of the BiI3 thin film is more than 1 μm, which leads to a low density of defects. It is worth-noticing that all of the procedures are conducted in open air. The temperature and duration of the iodization process are systematically investigated. By selecting V2O5 and ZnO as a hole extraction layer and an electron transport layer, an all-inorganic BiI3 thin film solar cell with a structure of ITO/V2O5/BiI3/ZnO/Ag is fabricated, yielding a power conversion efficiency of 1.33%, along with an open-circuit voltage of 601 mV, a short-circuit current density of 5.57 mA cm−2 and a fill factor of 39.87%. The un-encapsulated device shows excellent stability, and the performance decreases by only 8.1% after 100 days of storage in dry air.

Graphical abstract: All-inorganic and lead-free BiI3 thin film solar cells by iodization of BiSI thin films

Back to tab navigation

Supplementary files

Article information


Submitted
07 Aug 2020
Accepted
07 Sep 2020
First published
08 Sep 2020

J. Mater. Chem. C, 2020,8, 14066-14074
Article type
Paper

All-inorganic and lead-free BiI3 thin film solar cells by iodization of BiSI thin films

Y. Wang, X. Shi, G. Wang, J. Tong and D. Pan, J. Mater. Chem. C, 2020, 8, 14066
DOI: 10.1039/D0TC03753B

Social activity

Search articles by author

Spotlight

Advertisements