Fabrication and characterization of ReO3-type dielectric films

Abstract

ReO₃-type NbO₂F and TaO₂F thin films were synthesized using HF vapor oxidation during hydrothermal treatment and their dielectric properties were investigated. It was confirmed for the first time that these ReO₃-type oxyfluoride thin films can function as dielectric materials, as demonstrated both theoretically and experimentally. NbO₂F and TaO₂F thin films exhibited relatively high dielectric constants of 80 and 60 at 1 MHz, respectively. This new ReO₃-type family of films is promising for the preparation of dielectric materials that can be utilized for improving electronic components. Moreover, our results provide a new strategy to improve dielectric constants without reducing bandgap energy.