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Issue 45, 2019
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Performance-enhanced solar-blind photodetector based on a CH3NH3PbI3/β-Ga2O3 hybrid structure

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Abstract

Solar-blind photodetectors have drawn great attention due to their excellent accuracy and precision ignoring the electromagnetic radiation interference from the sun. Here, we demonstrate a solar-blind photodetector by combining the inorganic wide bandgap semiconductor β-Ga2O3 with organic–inorganic hybrid perovskite (CH3NH3PbI3) for the first time. The photodetector with an intelligent architecture design and assembly technique was developed via a facile and low-cost solution processing method. Compared with the pure β-Ga2O3 photodetector, the performances of the device based on the CH3NH3PbI3/β-Ga2O3 hybrid structure were significantly enhanced. The photo-to-dark current ratio is 1460, the responsivity and detectivity are 85 mA W−1 and 1.28 × 1011 Jones, respectively. The device exhibits excellent reproducibility and stability under DUV light illumination, the rise and decay times are 0.11 and 0.45 s, respectively. The superior solar-blind/UVA rejection ratio (I254nm/I325nm) with a value of 221 indicates that our fabricated photodetector has an excellent sensitivity in the solar-blind region. This work can offer a new strategy to develop cheap and high-performance solar-blind photodetectors based on β-Ga2O3.

Graphical abstract: Performance-enhanced solar-blind photodetector based on a CH3NH3PbI3/β-Ga2O3 hybrid structure

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Publication details

The article was received on 17 Sep 2019, accepted on 10 Oct 2019 and first published on 15 Oct 2019


Article type: Paper
DOI: 10.1039/C9TC05115E
J. Mater. Chem. C, 2019,7, 14205-14211

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    Performance-enhanced solar-blind photodetector based on a CH3NH3PbI3/β-Ga2O3 hybrid structure

    L. Dong, T. Pang, J. Yu, Y. Wang, W. Zhu, H. Zheng, J. Yu, R. Jia and Z. Chen, J. Mater. Chem. C, 2019, 7, 14205
    DOI: 10.1039/C9TC05115E

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