Jump to main content
Jump to site search

Issue 45, 2019
Previous Article Next Article

A visible light detector based on a heterojunction phototransistor with a highly stable inorganic CsPbIxBr3−x perovskite and In–Ga–Zn–O semiconductor double-layer

Author affiliations

Abstract

An all-inorganic heterojunction phototransistor using a highly stable perovskite (CsPbIxBr3−x) and amorphous In–Ga–Zn–O (IGZO) double-layer is introduced to enhance the sensing performance of optoelectronic devices and to expand their detecting range from the ultraviolet to the visible light region. Despite the high-performance photoelectric properties of CsPbI3 perovskites retaining the α-phase, actual applications of the perovskite film are considerably hindered by the phase instability under ambient conditions. Here, in order to improve the long-term stability of the α-phase perovskite, we propose a multiple anion strategy in the perovskite structure. The developed CsPbIxBr3−x film is applied with bi-anion IxBr3−x instead of I3 by adding CsBr and PbBr2 in the CsPbI3 precursor solution. Using the optimized CsPbIxBr3−x film with 12 wt% of the additives CsBr and PbBr2 in the CsPbI3 precursor solution, we demonstrate an all-inorganic visible light detector based on a heterojunction phototransistor with a p++-Si/SiO2/IGZO/CsPbIxBr3−x/Ti–Al–Ti structure, in which IGZO and CsPbIxBr3−x are used as a charge transport layer and a light absorption layer, respectively. The phototransistor exhibits a responsivity of 26.48 A W−1, a detectivity of 8.42 × 1014 Jones, and an external quantum efficiency of 51% under visible light illumination (635 nm). In particular, it shows excellent stability over 1 month under ambient conditions.

Graphical abstract: A visible light detector based on a heterojunction phototransistor with a highly stable inorganic CsPbIxBr3−x perovskite and In–Ga–Zn–O semiconductor double-layer

Back to tab navigation

Supplementary files

Publication details

The article was received on 29 Aug 2019, accepted on 13 Oct 2019 and first published on 15 Oct 2019


Article type: Paper
DOI: 10.1039/C9TC04757C
J. Mater. Chem. C, 2019,7, 14223-14231

  •   Request permissions

    A visible light detector based on a heterojunction phototransistor with a highly stable inorganic CsPbIxBr3−x perovskite and In–Ga–Zn–O semiconductor double-layer

    H. Na, N. Cho, J. Park, S. Lee, E. G. Lee, C. Im and Y. S. Kim, J. Mater. Chem. C, 2019, 7, 14223
    DOI: 10.1039/C9TC04757C

Search articles by author

Spotlight

Advertisements