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Issue 43, 2019
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Enhanced piezoresistive performance of 3C-SiC nanowires by coupling with ultraviolet illumination

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Abstract

The sensitivity of the piezoresistive behavior is one of the keys for investigating high-performance pressure sensors. In this work, we reported the enhanced piezoresistive behaviors of 3C-SiC nanowires by coupling with illumination by ultraviolet (UV) light. The as-synthesized single-crystalline SiC nanowires had 1.9 at% N dopants and crystal top surface of (1[2 with combining macron]1). It was found that at the applied force of 28.2 nN, the piezoresistance coefficient of the SiC nanowire could be increased up to 11.79 × 10−11 Pa−1 under 405 nm UV light illumination with a power of 62.4 mW, which was ∼300% more than that under dark, suggesting its substantially enhanced sensitivity. The present work could provide some insights into exploring advanced SiC pressure sensors with improved sensitivity.

Graphical abstract: Enhanced piezoresistive performance of 3C-SiC nanowires by coupling with ultraviolet illumination

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Supplementary files

Article information


Submitted
28 Jul 2019
Accepted
21 Sep 2019
First published
23 Sep 2019

J. Mater. Chem. C, 2019,7, 13384-13389
Article type
Communication

Enhanced piezoresistive performance of 3C-SiC nanowires by coupling with ultraviolet illumination

X. Li, F. Gao, L. Wang, L. Jiang, S. Chen and W. Yang, J. Mater. Chem. C, 2019, 7, 13384
DOI: 10.1039/C9TC04116H

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