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Issue 39, 2019
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A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage

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Abstract

This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT). The design includes a bottom gate, a top field plate and an AlN dielectric layer, which realized broad transconductance (gate voltage operating between −3 V to 3 V) and high off-state breakdown voltage (620 V @ VG = −10 V) simultaneously. The device shows great potential in the application of high-power electronics with good linear characteristics.

Graphical abstract: A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage

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Article information


Submitted
09 Jul 2019
Accepted
30 Aug 2019
First published
31 Aug 2019

J. Mater. Chem. C, 2019,7, 12075-12079
Article type
Communication

A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage

D. Chen, Z. Liu, J. Liang, L. Wan, Z. Xie and G. Li, J. Mater. Chem. C, 2019, 7, 12075
DOI: 10.1039/C9TC03718G

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