Issue 22, 2019
From the journal:

Journal of Materials Chemistry C

High internal quantum efficiency ZnO/ZnMgO multiple quantum wells prepared on GaN/sapphire templates for ultraviolet light emitting diodes†

Shanshan Chen,‡a   Chenxiao Xu,‡b   Xinhua Pan, ORCID logo *b   Haiping He, ORCID logo b   Jingyun Huang, ORCID logo b   Bin Lub  and  Zhizhen Ye*b  

* Corresponding authors

a School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, People's Republic of China

b State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
E-mail: panxinhua@zju.edu.cn, yezz@zju.edu.cn

Abstract

5-Period ZnO/Zn0.9Mg0.1O Multiple Quantum Wells (MQWs) were fabricated by plasma-assisted molecular beam epitaxy. The dominant edge threading dislocations in epitaxial films were dramatically reduced by using GaN/Al2O3 as substrates. As a result, a record high internal quantum efficiency of 61% at 300 K was obtained for the ZnO/Zn0.9Mg0.1O MQWs.

Graphical abstract: High internal quantum efficiency ZnO/ZnMgO multiple quantum wells prepared on GaN/sapphire templates for ultraviolet light emitting diodes

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Article information

DOI
https://doi.org/10.1039/C9TC01421G
Article type
Communication
Submitted
15 Mar 2019
Accepted
17 May 2019
First published
20 May 2019

J. Mater. Chem. C, 2019,7, 6534-6538

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High internal quantum efficiency ZnO/ZnMgO multiple quantum wells prepared on GaN/sapphire templates for ultraviolet light emitting diodes

S. Chen, C. Xu, X. Pan, H. He, J. Huang, B. Lu and Z. Ye, J. Mater. Chem. C, 2019, 7, 6534 DOI: 10.1039/C9TC01421G

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