Deposition rate related DPA OFET threshold voltage shift and hysteresis variation

Abstract

2,6-Diphenylanthracene (DPA) thin films have been deposited with a rate range of 0.01 Å s⁻¹ to 3.00 Å s⁻¹ to elucidate the influence of deposition rate on the figures of merit other than the mobility of organic field-effect transistors (OFETs). Transfer I–V curves suggest that the threshold voltage (V_th) and hysteresis of DPA OFETs can be roughly controlled within limits by varying the deposition rate.