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Issue 42, 2018
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Microwave-assisted synthesis of group 5 transition metal dichalcogenide thin films

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Abstract

Layer-structured transition metal dichalcogenide (TMDC) thin films have recently emerged as a new class of materials holding great promise as novel catalytic materials and for other electronic applications. Although many successes in the synthesis of group 6 TMDCs have been reported, the synthesis of group 5 TMDCs has rarely been investigated. In this study, we have developed a one-step solution phase synthesis of group 5 TMDC films directly grown on a substrate. As example materials, we synthesized NbS2, NbSe2, VSe2, and VTe2 films directly on Si wafers. We used microwave-assisted synthesis employing thermolysis of the precursors exclusively at the surface of the electrically conductive Si wafer substrate. Microwave absorption and heat loss of the substrate was experimentally and theoretically analyzed, and the microwave conditions for the synthesis are clarified. We have performed the elemental and structural analysis of the synthesized films, and investigated the growth kinetics of the synthesized films. This study paves a robust way for the synthesis of various group 5 TMDC films in solution phases.

Graphical abstract: Microwave-assisted synthesis of group 5 transition metal dichalcogenide thin films

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Publication details

The article was received on 06 Aug 2018, accepted on 03 Oct 2018 and first published on 04 Oct 2018


Article type: Paper
DOI: 10.1039/C8TC03909G
Citation: J. Mater. Chem. C, 2018,6, 11303-11311

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    Microwave-assisted synthesis of group 5 transition metal dichalcogenide thin films

    J. Kwak, S. Jung, N. Lee, K. Thiyagarajan, J. K. Kim, A. Giri and U. Jeong, J. Mater. Chem. C, 2018, 6, 11303
    DOI: 10.1039/C8TC03909G

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