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Issue 37, 2018
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K2MnGe3S8: a new multifunctional semiconductor featuring [MnGe3S8]2− layers and demonstrating interesting nonlinear optical response and antiferromagnetic properties

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Abstract

A new multifunctional quaternary chalcogenide K2MnGe3S8 was discovered for the first time by using a conventional high-temperature solid-state reaction method. K2MnGe3S8 crystallizes in the space group P21 (no. 4) of the monoclinic system and features a 2[MnGe3S8]2− layer constructed by 1[MnGeS6]6− anionic chains and [Ge2S6]4− dimers. This air-stable compound exhibits a large band gap (about 2.95 eV) and a moderate nonlinear optical (NLO) response (about 0.6 × AgGaS2 with a particle size of 20–41 μm at a laser radiation of 2.09 mm). Moreover, despite the large Mn⋯Mn separation, namely, 7.1978 Å for the shortest intralayer Mn⋯Mn and 6.6975 Å for the neighboring interlayer Mn⋯Mn, K2MnGe3S8 exhibits an interesting antiferromagnetic transition at ∼8.1 K. The optical and magnetic properties are also investigated by first principles calculations. Our study demonstrates that the interplay between NLO-active structural units and transition metals may contribute to the discovery of new multifunctional materials.

Graphical abstract: K2MnGe3S8: a new multifunctional semiconductor featuring [MnGe3S8]2− layers and demonstrating interesting nonlinear optical response and antiferromagnetic properties

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Publication details

The article was received on 25 Jul 2018, accepted on 26 Aug 2018 and first published on 29 Aug 2018


Article type: Paper
DOI: 10.1039/C8TC03694B
J. Mater. Chem. C, 2018,6, 10042-10049

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    K2MnGe3S8: a new multifunctional semiconductor featuring [MnGe3S8]2− layers and demonstrating interesting nonlinear optical response and antiferromagnetic properties

    Z. Li, X. Jiang, C. Yi, M. Zhou, Y. Guo, X. Luo, Z. Lin, Y. Wu, Y. Shi and J. Yao, J. Mater. Chem. C, 2018, 6, 10042
    DOI: 10.1039/C8TC03694B

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