Issue 3, 2018

n-Type organic light-emitting transistors with high mobility and improved air stability

Abstract

n-Channel organic light-emitting field-effect transistors (OLETs) based on perylene diimide (PDI-C13) with improved air stability were fabricated using a short channel length and thermal annealing. Both shortening of channel length and thermal annealing improved source–drain current; thermal annealing facilitated charge injection and improved PLQY of the PDI-C13 film. The light-emitting mechanism of OLETs was elaborated: that is, the OLETs were lateral organic light-emitting diodes in nature, the gate voltage (VGS) modulated light intensity by controlling electron density, and the light intensity was a quadratic function of VGS. This is the first example of n-channel OLETs that can operate in air.

Graphical abstract: n-Type organic light-emitting transistors with high mobility and improved air stability

Supplementary files

Article information

Article type
Paper
Submitted
06 Oct 2017
Accepted
11 Dec 2017
First published
02 Jan 2018

J. Mater. Chem. C, 2018,6, 535-540

n-Type organic light-emitting transistors with high mobility and improved air stability

L. Ma, D. Qin, Y. Liu and X. Zhan, J. Mater. Chem. C, 2018, 6, 535 DOI: 10.1039/C7TC04556E

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