Issue 41, 2017

Substrate orientation-induced epitaxial growth of face centered cubic Mo2C superconductive thin film

Abstract

In this study, we demonstrate the crystal structure-controlled growth of superconductive Mo2C thin films on a sapphire(0001) substrate in the pulsed-laser deposition. Detailed characterizations indicate that the thin film grown at 700 °C adopts the face centered cubic structure with the preferred orientation of the 〈111〉 direction. It was also demonstrated that the sapphire substrate and face centered cubic structured Mo2C thin film have the orientation relationship of {0006}sapphire//{111}Mo2C and [01[1 with combining macron]0]sapphire//[1[1 with combining macron]0] Mo2C due to a small in-plane lattice mismatch between their corresponding lattice spacing perpendicular to the {111} atomic plane of the Mo2C thin film. Electrical transport measurements show that the Mo2C thin films exhibit superconducting characteristics. This study provides a practical approach to controlling the crystal structure of superconductive Mo2C thin films through the optimization of substrate orientation.

Graphical abstract: Substrate orientation-induced epitaxial growth of face centered cubic Mo2C superconductive thin film

Article information

Article type
Paper
Submitted
12 Aug 2017
Accepted
25 Sep 2017
First published
26 Sep 2017

J. Mater. Chem. C, 2017,5, 10822-10827

Substrate orientation-induced epitaxial growth of face centered cubic Mo2C superconductive thin film

Z. Zhang, F. Zhang, H. Wang, C. Ho Chan, W. Lu and J. Dai, J. Mater. Chem. C, 2017, 5, 10822 DOI: 10.1039/C7TC03652C

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