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Issue 30, 2017
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Performance improvement of a ZnMgO ultraviolet detector by chemical treatment with hydrogen peroxide

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Abstract

Herein, ZnMgO thin film ultraviolet (UV) photodetectors based on metal–semiconductor–metal structure were fabricated on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The effect of H2O2 solution treatment on the properties of the ZnMgO thin film and its UV photodetectors was investigated. After immersing the ZnMgO UV photodetector in a H2O2 solution at 100 °C for 3 min, the dark current of the device was reduced by more than one order of magnitude under 1 V bias, whereas the responsivity was slightly decreased. More interestingly, the response speed became much quicker and insensitive to the atmosphere after the treatment of the photodetector with H2O2 solution, which can be attributed to the reduction in the oxygen vacancy defects. Our findings may provide a promising approach for improving the performance of photodetectors.

Graphical abstract: Performance improvement of a ZnMgO ultraviolet detector by chemical treatment with hydrogen peroxide

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Article information


Submitted
02 Jun 2017
Accepted
04 Jul 2017
First published
13 Jul 2017

J. Mater. Chem. C, 2017,5, 7598-7603
Article type
Paper

Performance improvement of a ZnMgO ultraviolet detector by chemical treatment with hydrogen peroxide

Y. Zhu, K. Liu, X. Wang, J. Yang, X. Chen, X. Xie, B. Li and D. Shen, J. Mater. Chem. C, 2017, 5, 7598
DOI: 10.1039/C7TC02425H

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