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Issue 15, 2017
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Rapid laser-induced photochemical conversion of sol–gel precursors to In2O3 layers and their application in thin-film transistors

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Abstract

We report the development of indium oxide (In2O3) transistors via a single step laser-induced photochemical conversion process of a sol–gel metal oxide precursor. Through careful optimization of the laser annealing conditions we demonstrated successful conversion of the precursor to In2O3 and its subsequent implementation in n-channel transistors with electron mobility up to 13 cm2 V−1 s−1. Importantly, the process does not require thermal annealing making it compatible with temperature sensitive materials such as plastic. On the other hand, the spatial conversion/densification of the sol–gel layer eliminates additional process steps associated with semiconductor patterning and hence significantly reduces fabrication complexity and cost. Our work demonstrates unambiguously that laser-induced photochemical conversion of sol–gel metal oxide precursors can be rapid and suitable for the manufacturing of large-area electronics.

Graphical abstract: Rapid laser-induced photochemical conversion of sol–gel precursors to In2O3 layers and their application in thin-film transistors

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Publication details

The article was received on 11 Jan 2017, accepted on 21 Mar 2017 and first published on 22 Mar 2017


Article type: Communication
DOI: 10.1039/C7TC00169J
Citation: J. Mater. Chem. C, 2017,5, 3673-3677
  • Open access: Creative Commons BY-NC license
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    Rapid laser-induced photochemical conversion of sol–gel precursors to In2O3 layers and their application in thin-film transistors

    S. Dellis, I. Isakov, N. Kalfagiannis, K. Tetzner, T. D. Anthopoulos and D. C. Koutsogeorgis, J. Mater. Chem. C, 2017, 5, 3673
    DOI: 10.1039/C7TC00169J

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