Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.


Issue 34, 2016
Previous Article Next Article

Low-voltage organic devices based on pristine and self-assembled monolayer-treated HfTiOx gate dielectrics

Author affiliations

Abstract

Low-voltage organic field-effect transistors (OFETs) and complementary metal oxide semiconductor (CMOS) inverters based on pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13) were fabricated on HfTiOx gate dielectrics. Both pristine dielectrics and substrates passivated with self-assembled monolayers (SAMs) of n-dodecylphosphonic acid (PA-C12) were employed. The high capacitance and low leakage current of the HfTiOx-based dielectrics enabled the devices to operate at |V| < 3 V. Passivation with PA-C12 was highly effective in improving the device characteristics. In particular, an electron mobility of 0.72 cm2 V−1 s−1 was measured for the device fabricated with the passivated HfTiOx dielectric, which represents the best performance reported to date for perylene-based OFETs prepared with thin, high-k gate dielectrics. The CMOS inverters exhibited fast switching and high gain characteristics, which were attributed to good coupling between the optimized p- and n-type OFETs.

Graphical abstract: Low-voltage organic devices based on pristine and self-assembled monolayer-treated HfTiOx gate dielectrics

Back to tab navigation

Article information


Submitted
07 Jul 2016
Accepted
03 Aug 2016
First published
03 Aug 2016

J. Mater. Chem. C, 2016,4, 7999-8005
Article type
Paper

Low-voltage organic devices based on pristine and self-assembled monolayer-treated HfTiOx gate dielectrics

J. Kim, J. Oh, D. Kim, H. Lee, Y. Ha and J. Choi, J. Mater. Chem. C, 2016, 4, 7999
DOI: 10.1039/C6TC02851A

Social activity

Search articles by author

Spotlight

Advertisements