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Issue 24, 2016
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Topological insulator Bi2Se3 nanowire/Si heterostructure photodetectors with ultrahigh responsivity and broadband response

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Abstract

Owing to the unique properties of nontrivial Dirac cones on the surface and a narrow bandgap in the bulk, topological insulators have become one of the most promising candidates in the construction of novel electronic and photonic devices. Herein, single-crystalline topological insulators of Bi2Se3 nanowires (NWs) were synthesized via a Au-catalyzed vapor–liquid–solid (VLS) method. Through the transfer of the Bi2Se3 NWs onto a pre-patterned SiO2/Si substrate, Bi2Se3 NW/Si heterostructure photodetectors were fabricated for the first time. The photodetectors exhibited excellent detection performance with an optimized responsivity of ∼103 A W−1 and a broad spectral range from 380 to 1310 nm. The responsivity is significantly better than previous reports and represents the highest value for topological insulator-based photodetectors. The high-crystal quality of the Bi2Se3 NWs, along with the high built-in electric field at the heterostructure interface, is responsible for the excellent performance of the Bi2Se3 NW/Si heterostructure photodetectors. Given the ultrahigh light responsivity, high-speed and broadband response properties, the Bi2Se3 NW/Si heterostructure will have important applications in new-generation optoelectronic devices.

Graphical abstract: Topological insulator Bi2Se3 nanowire/Si heterostructure photodetectors with ultrahigh responsivity and broadband response

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Supplementary files

Article information


Submitted
14 Mar 2016
Accepted
12 May 2016
First published
13 May 2016

J. Mater. Chem. C, 2016,4, 5648-5655
Article type
Paper

Topological insulator Bi2Se3 nanowire/Si heterostructure photodetectors with ultrahigh responsivity and broadband response

C. Liu, H. Zhang, Z. Sun, K. Ding, J. Mao, Z. Shao and J. Jie, J. Mater. Chem. C, 2016, 4, 5648
DOI: 10.1039/C6TC01083K

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