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Issue 7, 2016
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Enriching Si quantum dots in a Si-rich SiNx matrix for strong χ(3) optical nonlinearity

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Abstract

To meet the demand of all-optical data processing applications, the SiNx layer with enriching Si quantum dots (Si-QDs) for achieving strong optical nonlinearity is demonstrated with its χ(3) coefficient enhanced by three orders of magnitude larger than that of stoichiometric Si3N4. With excessive Si concentration enriched from 16.3% to 23.4%, the dense Si-QDs apparently self-assemble in the SiNx matrix with an average size of ∼0.95 nm and volume density of 5 × 1019 # cm−3. The Si-QD doped Si-rich SiNx not only enlarges its third-order nonlinear absorption coefficient from 0.01 to 1.8 m GW−1, but also increases its nonlinear refractive index from 5.7 × 10−13 to 9.2 × 10−12 cm2 W−1 at a wavelength of 800 nm, as attributed to the localized excitons with decreased effective Bohr radius in quantum confined Si-QDs. Such a SiNx:Si-QD material enables strong optical nonlinearity in compact nonlinear nanophotonic waveguide devices developed for future all-optical data processors.

Graphical abstract: Enriching Si quantum dots in a Si-rich SiNx matrix for strong χ(3) optical nonlinearity

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Article information


Submitted
14 Oct 2015
Accepted
14 Jan 2016
First published
15 Jan 2016

J. Mater. Chem. C, 2016,4, 1405-1413
Article type
Paper

Enriching Si quantum dots in a Si-rich SiNx matrix for strong χ(3) optical nonlinearity

C. Wu, Y. Lin, C. Cheng, S. Su, B. Huang, J. Chang, C. Wu, C. Lee and G. Lin, J. Mater. Chem. C, 2016, 4, 1405
DOI: 10.1039/C5TC03329B

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