Issue 37, 2015
From the journal:

Journal of Materials Chemistry C

Correction: The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C–SiC(100) four terminal devices

Afzaal Qamar,*a   Hoang-Phuong Phan,a   Jisheng Han,a   Philip Tanner,a   Toan Dinh,a   Li Wang,a   Sima Dimitrijevab  and  Dzung Viet Daoab  

* Corresponding authors

a Queensland Micro- and Nanotechnology Centre, Griffith University, Queensland, Australia
E-mail: afzaal.qamar@griffithuni.edu.au

b School of Engineering, Griffith University, Queensland, Australia

Abstract

Correction for ‘The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C–SiC(100) four terminal devices’ by Afzaal Qamar et al., J. Mater. Chem. C, 2015, 3, 8804–8809.

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Article information

DOI
https://doi.org/10.1039/C5TC90162F
Article type
Correction
Submitted
25 Aug 2015
Accepted
25 Aug 2015
First published
02 Sep 2015
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2015,3, 9748-9748

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Correction: The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C–SiC(100) four terminal devices

A. Qamar, H. Phan, J. Han, P. Tanner, T. Dinh, L. Wang, S. Dimitrijev and D. V. Dao, J. Mater. Chem. C, 2015, 3, 9748 DOI: 10.1039/C5TC90162F

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