Jump to main content
Jump to site search

Issue 35, 2015
Previous Article Next Article

Electronic structures of multilayer two-dimensional silicon carbide with oriented misalignment

Author affiliations

Abstract

The direct bandgap is favored for optoelectronic applications, such as light emitting or laser diodes and solar cells. While monolayer two-dimensional graphene-like silicon carbide (2d-SiC) possesses a moderate direct bandgap, multilayer 2d-SiC was recently found to exhibit an indirect bandgap. In this paper, our ab initio electronic study demonstrates that a controllable direct bandgap of bilayer/trilayer 2d-SiC can be realized via the interlayer oriented misalignment, where their direct-bandgap character can be maintained for most rotation angles. This misalignment-induced direct bandgap shows a decreasing tendency with a larger commensuration cell, where the minimum direct optical transition frequency can vary from infrared to visible. Our work implies that the interlayer oriented misalignment is a crucial way to tailor the electronic structures of multilayer 2d-SiC, facilitating potential applications for optoelectronic devices.

Graphical abstract: Electronic structures of multilayer two-dimensional silicon carbide with oriented misalignment

Back to tab navigation

Supplementary files

Publication details

The article was received on 08 Jun 2015, accepted on 14 Jul 2015 and first published on 14 Jul 2015


Article type: Paper
DOI: 10.1039/C5TC01679G
Author version
available:
Download author version (PDF)
Citation: J. Mater. Chem. C, 2015,3, 9057-9062

  •   Request permissions

    Electronic structures of multilayer two-dimensional silicon carbide with oriented misalignment

    X. Lin, S. Lin, Y. Xu and H. Chen, J. Mater. Chem. C, 2015, 3, 9057
    DOI: 10.1039/C5TC01679G

Search articles by author

Spotlight

Advertisements