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Issue 20, 2015
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Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory

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Abstract

Layered GeSe2 nanobelts doped with Bi have been synthesized by thermal reduction of Bi2Se3 nanopowder using germanium (Ge). The nanobelts prepared showed excellent p-type conductivity, with hole mobility as high as 690 cm2 V−1 s−1. The introduction of Bi leads to the formation of a commensurate superstructure, and induces the growth of nanobelts along the [010] direction. Two-terminal devices, based on individual GeSe2:Bi nanobelts with Ag electrodes, showed symmetrical resistive switching (RS) behavior accompanied by negative differential resistance. A space charge polarization model has been proposed. For the doping of Bi, the ordered superstructure defects and variable valences create trap centers, in which charges can effectively be captured and stored to generate polarization effects under a relatively large applied electric field. Additionally, the relatively large negative RS window can further be utilized as a non-volatile resistance random access memory (RRAM). The superior stability, reversibility, non-destructive readout and good cycling performance of the nanodevices demonstrated that Bi-doped GeSe2 nanobelts have considerable potential in next-generation non-volatile memory applications.

Graphical abstract: Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory

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Publication details

The article was received on 14 Feb 2015, accepted on 13 Apr 2015 and first published on 14 Apr 2015


Article type: Paper
DOI: 10.1039/C5TC00451A
J. Mater. Chem. C, 2015,3, 5207-5213

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    Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory

    M. Cao, B. Cheng, L. Xiao, J. Zhao, X. Su, Y. Xiao and S. Lei, J. Mater. Chem. C, 2015, 3, 5207
    DOI: 10.1039/C5TC00451A

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